Liverpool Skyline

Department of Electronics and Electrical Engineering

Dr Brahim Benbakhti

Dr Brahim Benbakhti

Telephone: 0151 231 2249

Biography

Brahim Benbakhti received M.Sc. and Ph.D. degrees in microwave and microtechnology from University of Lille I, France, in 2003 and 2007, respectively. He had worked on the thermal management of GaN base field effect transistors for power applications and UV AlN and cBN photodetectors at CNRS-IEMN, University of Lille I for 4 years since 2003. In 2007, he joined the CNRS-CRHEA, France, where he was employed to focus on the research of optical and electrical characterisation of GaN resonant tunnelling diodes and III-nitrides MOCVD epitaxial growth as an associate lecturer. From 2008 to 2011, he was a research associate in the School of Engineering, University of Glasgow, U.K., where his research interest was primarily about nanoscale III-V and Ge channel MOSFETs and their statistical variabilities for digital applications. Since Aug. 2012, he has been a member of the microelectronics group, School of Engineering, Liverpool John Moores University, U.K. He is currently working extensively on the characterisation and simulation of reliability in III-Nitrides power devices.

Publications

Journal article

Othman NAF, Rahman S, Wan Muhamad Hatta S, Soin N, Benbakhti B, Duffy S. 2019. ’Design Optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions Microelectronics International, 36 :73-82 >DOI >Public Url

Ma J, Chai Z, Zhang W, Zhang J, Ji Z, Benbakhti B, Govoreanu B, Simoen E, Goux L, Belmonte A, Degraeve R, Kar G, Jurczak M. 2018. Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution IEEE Transactions on Electron Devices, 65 :970-977 >DOI >Public Url

Duffy STEVEN, Benbakhti B, Kalna K, Boucherta M, Zhang W, Bourzgui N, Soltani A. 2018. Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs IEEE Access, 6 :42721-42728 >DOI >Public Url

Duffy SJ, Benbakhti B, Mattalah M, Zhang W, Bouchilaoun M, Boucherta M, Kalna K, Bourzgui N, Maher H, Soltani A. 2017. Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate ECS Journal of Solid State Science and Technology, 6 :S3040-S3043 >DOI >Public Url

Ahmeda K, Ubochi B, Benbakhti B, Duffy SJ, Soltani A, Zhang W, Kalna K. 2017. Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures IEEE Access, 5 :20946-20952 >DOI >Public Url

Ma J, Zhang W, Zhang JF, Benbakhti B, Ji Z, Mitard J, Arimura H. 2016. A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, :3830-3836 >DOI >Public Url

Benbakhti B, Chan KH, Soltani A, Kalna K. 2016. Device and Circuit Performance of the Future Hybrid III-V and Ge-Based CMOS Technology IEEE Transactions on Electron Devices, PP >DOI >Public Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2014. Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs IEEE ELECTRON DEVICE LETTERS, 35 :160-162 >DOI >Link >Public Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang WD, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker PR. 2014. Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :1307-1315 >DOI >Link >Public Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Duan M, Zhang W, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2013. Towards understanding hole traps and NBTI of Ge/GeO2/Al 2O3 structure Microelectronic Engineering, 109 :43-45 >DOI

Hellings G, Hikavyy A, Mitard J, Witters L, Benbakhti B, Alian A, Waldron N, Bender H, Eneman G, Krom R, Schulze A, Vandervorst W, Loo R, Heyns M, Meuris M, Hoffmann T, De Meyer K. 2012. The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures THIN SOLID FILMS, 520 :3326-3331 >DOI >Link

Benbakhti B, Martinez A, Kalna K, Hellings G, Eneman G, De Meyer K, Meuris M. 2012. Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47As Implant Free Quantum Well MOSFET IEEE TRANSACTIONS ON NANOTECHNOLOGY, 11 :808-817 >DOI >Link

Benbakhti B, Zhang JF, Ji Z, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2012. Characterization of electron traps in Si-capped Ge MOSFETs with HfO 2/SiO2 gate stack IEEE Electron Device Letters, 33 :1681-1683 >DOI

Benbakhti B, Chan K, Towie E, Kalna K, Riddet C, Wang X, Eneman G, Hellings G, De Meyer K, Meuris M, Asenov A. 2011. Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach SOLID-STATE ELECTRONICS, 63 :14-18 >DOI >Link

Islam A, Benbakhti B, Kalna K. 2011. Monte Carlo Study of Ultimate Channel Scaling in Si and In0.3Ga0.7As Bulk MOSFETs IEEE TRANSACTIONS ON NANOTECHNOLOGY, 10 :1424-1432 >DOI >Link

Chan KH, Benbakhti B, Riddet C, Watling JR, Asenov A. 2011. Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET Microelectronic Engineering, 88 :362-365 >DOI

Benbakhti B, Kalna K, Chan KH, Towie E, Hellings G, Eneman G, De Meyer K, Meuris M, Asenov A. 2011. Design and analysis of the In0.53Ga0.47As implant-free quantum-well device structure Microelectronic Engineering, 88 :358-361 >DOI

Barkad HA, Soltani A, Mattalah M, Gerbedoen J-C, Rousseau M, De Jaeger J-C, BenMoussa A, Mortet V, Haenen K, Benbakhti B, Moreau M, Dupuis R, Ougazzaden A. 2010. Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes JOURNAL OF PHYSICS D-APPLIED PHYSICS, 43 :465104-465104 >DOI >Link

Benbakhti B, Ayubi-Moak JS, Kalna K, Lin D, Hellings G, Brammertz G, De Meyer K, Thayne I, Asenov A. 2010. Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures MICROELECTRONICS RELIABILITY, 50 :360-364 >DOI >Link

Islam A, Benbakhti B, Kalna K. 2010. Electron velocity decline in Si nanoscales MOSFETs with the shortening of gate length Journal of Physics: Conference Series, 242 :012011-012011 >DOI

Benbakhti B, Soltani A, Kalna K, Rousseau M, De Jaeger J-C. 2009. Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices IEEE TRANSACTIONS ON ELECTRON DEVICES, 56 :2178-2185 >DOI >Link

Ayubi-Moak J, Benbakhti B, Kalna K, Paterson GW, Hill R, Passlack M, Thayne I, Asenov A. 2009. Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs Microelectronic Engineering, 86 :1564-1567 >DOI

Benbakhti B, Rousseau M, Soltani A, De Jaeger JC. 2009. Electron transport properties of gallium nitride for microscopic power device modelling Journal of Physics : Conference Series, 193 :012005-012005 >DOI

Benbakhti B, Ayubi-Moak JS, Kalna K, Asenov A. 2009. Effect of Interface State Trap Density on the Performance of Scaled Surface Channel In0.3Ga0.7As MOSFETs Journal of Physics : Conference Series, 193 :012122-012122 >DOI

Cordier Y, Semond F, Moreno JC, Frayssinet E, Benbakhti B, Cao Z, Chenot S, Nguyen L, Tottereau O, Soltani A, Blary K. 2009. Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns Materials Science in Semiconductor Processing, 12 :16-20 >DOI

Soltani A, Barkad HA, Mattalah M, Benbakhti B, De Jaeger J-C, Chong YM, Zou YS, Zhang WJ, Lee ST, BenMoussa A, Giordanengo B, Hochedez J-F. 2008. 193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors APPLIED PHYSICS LETTERS, 92 :053501-053501 >DOI >Link

Benbakhti B, Rousseau M, De Jaeger J-C. 2007. Physical study of the dissipated power area in high electron mobility transistors for thermal modelling MICROELECTRONICS JOURNAL, 38 :7-13 >DOI >Link

Benbakhti B, Rousseau M, Soltani A, De Jaeger J-C. 2006. Analysis of thermal effect influence in gallium-nitride-based TLM structures by means of a transport-thermal modeling IEEE TRANSACTIONS ON ELECTRON DEVICES, 53 :2237-2242 >DOI >Link

Meliani M, Feham M, Benbakhti B. 2005. Analyse des structures planaires multicouches à ferrite par la méthode des éléments finis Revue Internationale des Sciences et Technologie, 1 :209-221 >DOI

Conference publication

Ahmeda K, Ubochi B, Kalna K, Benbakhti B, Duffy SJ, Zhang W, Soltani A. 2017. Self-Heating and Polarization Effects in AlGaN/AlN/GaN/AlGaN Based Devices European Microwave Association (EuMA), European Microwave Integrated Circuits (EuMIC) :37-40 >Public Url

Duan M, Zhang JF, Zhang JC, Zhang W, Ji Z, Benbakhti B, Zhang XF, Hao Y, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G, Asenov A. 2017. Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction IEEE International Reliability Physics Symposium Proceedings, IEEE International Reliability Physics Symposium (IRPS) :XT-5.1-XT-5.7 >DOI >Public Url

Duffy SJ, Gerbedoen JC, Mattalah M, Benbakhti B, Zhang W, Boucherta M, Kalna K, Maher H, Soltani A. 2017. Low Ohmic Contact Resistance for AlGaN/GaN HEMTs with high Al Concentration & Si-HP [111] Substrate UK Semiconductors :149-149

Ma J, Chai Z, Zhang W, Govoneanu B, Zhang J, Ji Z, Benbakhti B, Groeseneken G, Jurczak M. 2016. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement Technical Digest - International Electron Devices Meeting, IEEE International Electron Devices Meeting :564-567 >DOI >Public Url

Ahmeda K, Faramehr S, Igic P, Kalna K, Duffy SJ, Soltani A, Benbakhti B. 2016. The Effect of Self-Heating and Electrical Stress induced Polarization in AlGaN/GaN Heterojunction Based Devices 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) :203-206 >DOI >Link

Ahmeda K, Faramehr S, Igić P, Kalna K, Duffy S, Soltani A, Benbakhti B. 2016. Electrical Stress Induced Surface Polarisation in AlGaN/GaN TLM Structures UK Semiconductors :197-197

Ma J, Zhang W, Zhang JF, JI Z, Benbakhti B, Franco J, Mitard J, Witters L, Collaert N, Groeseneken G. 2015. AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction 2015 Symposia on VLSI Technology and Circuits :T35-T34 >DOI >Public Url

Ma J, Zhang W, ZHang J, Benbakhti B, Ji Z, Mitard J, Franco J, Kaczer B, Groeseneken G. 2014. NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction 2014 IEEE International Electron Devices Meeting :34.2.1-34.2.4 >DOI >Public Url

Benbakhti B, Kalna K, Chan K, Towie E, Hellings G, Eneman G, De Meyer K, Meuris M, Asenov A. 2011. Design and analysis of the In0.53Ga0.47As implant-free quantum-well device structure MICROELECTRONIC ENGINEERING, EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88 :358-361 >DOI >Link

Chan KH, Benbakhti B, Riddet C, Watling JR, Asenov A. 2011. Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET MICROELECTRONIC ENGINEERING, EMRS Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88 :362-365 >DOI >Link

Chan KH, Benbakhti B, Riddet C, Watling J, Asenov A. 2011. Monte Carlo simulation of a 20 nm gate length implant free quantum well Ge pMOSFET with different lateral spacer width International Conference on Ultimate Integration on Silicon (ULIS) :1-4 >DOI

Towie E, Chan KH, Benbakhti B, Riddet C, Asenov A. 2011. Statistical variability in implant-free quantum-well MOSFETs with InGaAs and Ge: a comparative 3D simulation study Intel European Research and Innovation Conference >Link

Hellings G, Hikavyy A, Mitard J, Witters L, Benbakhti B, Alian A, Waldron N, Bender H, Eneman G, Krom R, Loo R, Heyns M, Meuris M, De Meyer K. 2011. The Implant-Free Quantum Well FET: Harnessing the Power of Heterostructures International Conference on Silicon Epitaxy and Heterostructures (ICSI)

Martinez A, Benbakhti B, Asenov A. 2010. Effect of the Channel Thickness on the Performance of Implant-Free Quantum-Well MOSFETs 2010 14th International Workshop on Computational Electronics (IWCE), International Workshop on Computational Electronics (IWCE) :113-116 >DOI >Link

Benbakhti B, Towie E, Kalna K, Hellings G, Eneman G, De Meyer K, Meuris M, Asenov A. 2010. Monte Carlo analysis of In0.53Ga0.47as Implant-Free Quantum-Well device performance Silicon Nanoelectronics Workshop (SNW), :1-2 >DOI

Aldegunde M, Loureiro A, Benbakhti B, Kalna K. 2010. Advancing Monte Carlo Simulations of Electron Transport in Bulk GaN UK Semiconductors :EP5-EP5

Benbakhti B, Kalna K, Wang X, Cheng B, Hellings G, Eneman G, De Mey K, Meuris M, Asenov A. 2010. Impact of Raised Source/Drain in the In53Ga47As Channel Implant-Free Quantum-Well Transistor International Conference on Ultimate Integration Silicon (ULIS) :129-132

Islam A, Benbakhti B, Kalna K. 2010. Electron velocity decline in Si nanoscale MOSFETs with the shortening of gate length Workshop on Theory, Modelling and Computation Methods for Semiconductor Materials and Nanostructures :18-18

Benbakhti B, Rousseau M, Soltani A, De Jaeger J-C. 2009. Electron Transport Properties of Gallium Nitride for Microscopic Power Device Modelling Palermo C, Bastard G. 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16) 193 >DOI >Link

Benbakhti B, Ayubi-Moak JS, Kalna K, Asenov A. 2009. Effect of Interface State Trap Density on the Performance of Scaled Surface Channel In0.3Ga0.7As MOSFETs Palermo C, Bastard G. 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16) 193 >DOI >Link

Cordier Y, Semond F, Moreno J-C, Frayssinet E, Benbakhti B, Cao Z, Chenot S, Nguyen L, Tottereau O, Soltani A, Blary K. 2009. Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 7th Workshop on Epitaxial Semiconductor on Patterned Substrate and Novel Index Surfaces (ESPS-NIS) 12 :16-20 >DOI >Link

Ayubi-Moak J, Benbakhti B, Kalna K, Paterson GW, Hill R, Passlack M, Thayne I, Asenov A. 2009. Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs MICROELECTRONIC ENGINEERING, 16th Biennial Conference on Insulating Films on Semiconductors 86 :1564-1567 >DOI >Link

Benbakhti B, Ayubi-Moak JS, Kalna K, Asenov A. 2009. Impact of Interface Optical Phonons and Interface State Trap Density on Surface Channel and Implant Free III-V MOSFETs based on In0.3Ga0.7As channel Silicon Nanoelectronics Workshop :147-148

Kalna K, Asenov A, Ayubi-Moak JS, Benbakhti B, Craven AJ, Droopad R, Hill R, Holland MC, Li X, Long AR, Longo P, MacIntyre D, Moran DAJ, Passlack M, Paterson G, Stanley CR, Thoms S, Zhou H, Thayne IG. 2008. III-V Semiconductor n-type Channel MOSFETs Integrated on Si Substrate for the 22 nm Technology and Beyond Institute for Solid State Electronics

Benbakhti B, Rousseau M, Soltani A, Laureyns J, De Jaeger JC. 2007. Thermal behaviour of gate-less AlGaN/GaN heterostructures 2007 European Microwave Integrated Circuits Conference, vols 1 and 2, 2nd European Microwave Integrated Circuits Conference :104-107 >DOI >Link

Benbakhti B, Rousseau M, Soltani A, De Jaeger JC. 2007. Analyse Physique et Thermique de Structures TLM AlGaN/GaN Journées Nationales Microondes (JNM) :9B3-9B3

Benbakhti B, Rousseau M, Soltani A, Laureyns J, De Jaeger JC. 2007. Mise en place d'un modèle physique pour l'analyse électrothermique des transistors de puissance des filières de matériaux à grande bande interdite Journées Thématiques du GDR Nanoélectronique sur la Simulation Multiphysique de Composants et Dispositifs Nanométriques

Benbakhti B, Rousseau M, De Jaeger JC. 2007. Physical Thermal Analysis of GaN HEMTs Transistors European Network of Excellence on Thermal Measurements

Benbakhti B, Rousseau M, De Jaeger JC. 2006. Study of field plate AlGaN/GaN HEMTs by means of a 2D-hydrodynamic model for power applications European Microwave Association (EuMA), European Microwave Integrated Circuits Conference (EuMIC) :363-366 >DOI >Link

Benbakhti B, Rousseau M, Gerbedoen JC, De Jaeger JC. 2006. Analyse physique de transistors HEMTs AlGaN/GaN élaborés avec la technologie field plate Journées de la Matière Condensée (JMC)

Gerbedoen JC, Soltani A, Benbakhti B, De Jaeger JC. 2006. Conception et réalisation de transistors HEMT AlGaN/GaN avec différentes topologies field plate Journées de la Matière Condensée (JMC),

Benbakhti B, Rousseau M, Werquin M, De Jaeger JC. 2005. Mise en oeuvre d’un modèle physique électrothermique pour la simulation de transistors à effet de champ de puissance Journées Nationales Microondes (JNM) :7B6-7B6

Benbakhti B, Rousseau M, De Jaeger JC. 2005. Implementation of a 2D electron-thermal model for power semiconductor devices simulation : application on gallium nitride Comsol Multiphysics Conference

Benbakhti B, Meliani M, Feham M, Benahmed N. 2005. Microstrip Phase Shifter on Dielectric-Ferrite Substrate For Antennas Alimentation IEEE Mediterranean Microwave Symposium (MMS’2005)

Meliani M, Benbakhti B, Feham M, Benahmed N. 2004. Direct Method of Characterization of Microwave Planar Phase-Shifters with Ferrite Substrate IEEE Mediterranean Microwave Symposium (MMS’2004)

Meliani M, Benbakhti B, Feham M, Benahmed N, Dali S, Irid SM. 2004. Electromagnetic Characterization of the Multi-Layer Planar Structures with Ferrite IEEE Mediterranean Microwave Symposium (MMS’2004)

Gaquiere C, Benbakhti B, Boulay S, Defrance N, Ducatteau D, Gerard G, Gerbedoen JC, Grimbert B, Hoel V, Lemaitre J, Rousseau M, Soltani A, De Jaeger JC, Medjdoub F, Aubry R, Dua C, Brylinski C, Floriot D, Lecoustre G, Morvan E, Poisson MA, Delage S. GaN devices for high performance RF power amplifier European Microwave Association (EuMA), European Microwave Integrated Circuits Conference (EuMIC)

De Jaeger JC, Benbakhti B, Boulay S, Defrance N, Gaquiere C, Gerard H, Gerbedoen JC, Grimbert B, Hoel V, Lemaitre J, Mattalah M, Rousseau M, Soltani A, Touati S, Delage S, Aubry R, Brylinski C, Morvan E, Poisson MA. Advanced results on nitride-based HEMTs for microwave power amplification 11th International Symposium on Microwave and Optical Technology

Barkad HA, Soltani A, Rousseau M, Benbakhti B, De Jaeger JC. Modelling, Fabrication and Measurement of AlN based Photodetectors Diamond and Related Materials

Benbakhti B, Duffy S, Zhang W, Kalna K, Ahmeda K, Boucherta M, Bourzgui N, Maher H, Soltani A. A Source and Drain Transient Currents Technique for Trap Characterisation in AlGaN/GaN HEMTs >Public Url