Liverpool Skyline

Department of Electronics and Electrical Engineering

Dr Brahim Benbakhti

Dr Brahim Benbakhti

Telephone: 0151 231 2249

Biography

Brahim Benbakhti received M.Sc. and Ph.D. degrees in microwave and microtechnology from University of Lille I, France, in 2003 and 2007, respectively. He had worked on the thermal management of GaN base field effect transistors for power applications and UV AlN and cBN photodetectors at CNRS-IEMN, University of Lille I for 4 years since 2003. In 2007, he joined the CNRS-CRHEA, France, where he was employed to focus on the research of optical and electrical characterisation of GaN resonant tunnelling diodes and III-nitrides MOCVD epitaxial growth as an associate lecturer. From 2008 to 2011, he was a research associate in the School of Engineering, University of Glasgow, U.K., where his research interest was primarily about nanoscale III-V and Ge channel MOSFETs and their statistical variabilities for digital applications. Since Aug. 2012, he has been a member of the microelectronics group, School of Engineering, Liverpool John Moores University, U.K. He is currently working extensively on the characterisation and simulation of reliability in III-Nitrides power devices.

Publications

Conference publication

Ma J, Zhang W, Zhang JF, JI Z, Benbakhti B, Franco J, Mitard J, Witters L, Collaert N, Groeseneken G. 2015. AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction 2015 Symposia on VLSI Technology and Circuits :T35-T34 >DOI >Public Url

Ma J, Zhang W, Zhang JF, JI Z, Benbakhti B, Franco J, Mitard J, Witters L, Collaert N, Groeseneken G. 2015. AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction 2015 Symposia on VLSI Technology and Circuits :T35-T34 >DOI >Public Url

Ma J, Zhang W, Zhang JF, JI Z, Benbakhti B, Franco J, Mitard J, Witters L, Collaert N, Groeseneken G. 2015. AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction 2015 Symposia on VLSI Technology and Circuits :T35-T34 >DOI >Public Url

Ma J, Zhang W, ZHang J, Benbakhti B, Ji Z, Mitard J, Franco J, Kaczer B, Groeseneken G. 2014. NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction 2014 IEEE International Electron Devices Meeting :34.2.1-34.2.4 >DOI >Public Url

Ma J, Zhang W, ZHang J, Benbakhti B, Ji Z, Mitard J, Franco J, Kaczer B, Groeseneken G. 2014. NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction 2014 IEEE International Electron Devices Meeting :34.2.1-34.2.4 >DOI >Public Url

Ma J, Zhang W, ZHang J, Benbakhti B, Ji Z, Mitard J, Franco J, Kaczer B, Groeseneken G. 2014. NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction 2014 IEEE International Electron Devices Meeting :34.2.1-34.2.4 >DOI >Public Url

Benbakhti B, Kalna K, Chan K, Towie E, Hellings G, Eneman G, De Meyer K, Meuris M, Asenov A. 2011. Design and analysis of the In0.53Ga0.47As implant-free quantum-well device structure MICROELECTRONIC ENGINEERING, EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88 :358-361 >DOI >Link

Chan KH, Benbakhti B, Riddet C, Watling JR, Asenov A. 2011. Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET MICROELECTRONIC ENGINEERING, EMRS Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88 :362-365 >DOI >Link

Benbakhti B, Kalna K, Chan K, Towie E, Hellings G, Eneman G, De Meyer K, Meuris M, Asenov A. 2011. Design and analysis of the In0.53Ga0.47As implant-free quantum-well device structure MICROELECTRONIC ENGINEERING, EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88 :358-361 >DOI >Link

Chan KH, Benbakhti B, Riddet C, Watling JR, Asenov A. 2011. Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET MICROELECTRONIC ENGINEERING, EMRS Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88 :362-365 >DOI >Link

Benbakhti B, Kalna K, Chan K, Towie E, Hellings G, Eneman G, De Meyer K, Meuris M, Asenov A. 2011. Design and analysis of the In0.53Ga0.47As implant-free quantum-well device structure MICROELECTRONIC ENGINEERING, EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88 :358-361 >DOI >Link

Chan KH, Benbakhti B, Riddet C, Watling JR, Asenov A. 2011. Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET MICROELECTRONIC ENGINEERING, EMRS Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88 :362-365 >DOI >Link

Martinez A, Benbakhti B, Asenov A. 2010. Effect of the Channel Thickness on the Performance of Implant-Free Quantum-Well MOSFETs 2010 14th International Workshop on Computational Electronics (IWCE), International Workshop on Computational Electronics (IWCE) :113-116 >DOI >Link

Martinez A, Benbakhti B, Asenov A. 2010. Effect of the Channel Thickness on the Performance of Implant-Free Quantum-Well MOSFETs 2010 14th International Workshop on Computational Electronics (IWCE), International Workshop on Computational Electronics (IWCE) :113-116 >DOI >Link

Martinez A, Benbakhti B, Asenov A. 2010. Effect of the Channel Thickness on the Performance of Implant-Free Quantum-Well MOSFETs 2010 14th International Workshop on Computational Electronics (IWCE), International Workshop on Computational Electronics (IWCE) :113-116 >DOI >Link

Benbakhti B, Rousseau M, Soltani A, De Jaeger J-C. 2009. Electron Transport Properties of Gallium Nitride for Microscopic Power Device Modelling Palermo C, Bastard G. 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16) 193 >DOI >Link

Benbakhti B, Ayubi-Moak JS, Kalna K, Asenov A. 2009. Effect of Interface State Trap Density on the Performance of Scaled Surface Channel In0.3Ga0.7As MOSFETs Palermo C, Bastard G. 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16) 193 >DOI >Link

Cordier Y, Semond F, Moreno J-C, Frayssinet E, Benbakhti B, Cao Z, Chenot S, Nguyen L, Tottereau O, Soltani A, Blary K. 2009. Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 7th Workshop on Epitaxial Semiconductor on Patterned Substrate and Novel Index Surfaces (ESPS-NIS) 12 :16-20 >DOI >Link

Ayubi-Moak J, Benbakhti B, Kalna K, Paterson GW, Hill R, Passlack M, Thayne I, Asenov A. 2009. Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs MICROELECTRONIC ENGINEERING, 16th Biennial Conference on Insulating Films on Semiconductors 86 :1564-1567 >DOI >Link

Benbakhti B, Rousseau M, Soltani A, De Jaeger J-C. 2009. Electron Transport Properties of Gallium Nitride for Microscopic Power Device Modelling Palermo C, Bastard G. 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16) 193 >DOI >Link

Benbakhti B, Ayubi-Moak JS, Kalna K, Asenov A. 2009. Effect of Interface State Trap Density on the Performance of Scaled Surface Channel In0.3Ga0.7As MOSFETs Palermo C, Bastard G. 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16) 193 >DOI >Link

Cordier Y, Semond F, Moreno J-C, Frayssinet E, Benbakhti B, Cao Z, Chenot S, Nguyen L, Tottereau O, Soltani A, Blary K. 2009. Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 7th Workshop on Epitaxial Semiconductor on Patterned Substrate and Novel Index Surfaces (ESPS-NIS) 12 :16-20 >DOI >Link

Ayubi-Moak J, Benbakhti B, Kalna K, Paterson GW, Hill R, Passlack M, Thayne I, Asenov A. 2009. Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs MICROELECTRONIC ENGINEERING, 16th Biennial Conference on Insulating Films on Semiconductors 86 :1564-1567 >DOI >Link

Benbakhti B, Rousseau M, Soltani A, De Jaeger J-C. 2009. Electron Transport Properties of Gallium Nitride for Microscopic Power Device Modelling Palermo C, Bastard G. 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16) 193 >DOI >Link

Benbakhti B, Ayubi-Moak JS, Kalna K, Asenov A. 2009. Effect of Interface State Trap Density on the Performance of Scaled Surface Channel In0.3Ga0.7As MOSFETs Palermo C, Bastard G. 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16) 193 >DOI >Link

Cordier Y, Semond F, Moreno J-C, Frayssinet E, Benbakhti B, Cao Z, Chenot S, Nguyen L, Tottereau O, Soltani A, Blary K. 2009. Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 7th Workshop on Epitaxial Semiconductor on Patterned Substrate and Novel Index Surfaces (ESPS-NIS) 12 :16-20 >DOI >Link

Ayubi-Moak J, Benbakhti B, Kalna K, Paterson GW, Hill R, Passlack M, Thayne I, Asenov A. 2009. Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs MICROELECTRONIC ENGINEERING, 16th Biennial Conference on Insulating Films on Semiconductors 86 :1564-1567 >DOI >Link

Benbakhti B, Rousseau M, Soltani A, Laureyns J, De Jaeger JC. 2007. Thermal behaviour of gate-less AlGaN/GaN heterostructures 2007 European Microwave Integrated Circuits Conference, vols 1 and 2, 2nd European Microwave Integrated Circuits Conference :104-107 >DOI >Link

Benbakhti B, Rousseau M, Soltani A, Laureyns J, De Jaeger JC. 2007. Thermal behaviour of gate-less AlGaN/GaN heterostructures 2007 European Microwave Integrated Circuits Conference, vols 1 and 2, 2nd European Microwave Integrated Circuits Conference :104-107 >DOI >Link

Benbakhti B, Rousseau M, Soltani A, Laureyns J, De Jaeger JC. 2007. Thermal behaviour of gate-less AlGaN/GaN heterostructures 2007 European Microwave Integrated Circuits Conference, vols 1 and 2, 2nd European Microwave Integrated Circuits Conference :104-107 >DOI >Link

Benbakhti B, Rousseau M, De Jaeger JC. 2006. Study of field plate AlGaN/GaN HEMTs by means of a 2D-hydrodynamic model for power applications European Microwave Association (EuMA), European Microwave Integrated Circuits Conference (EuMIC) :363-366 >DOI >Link

Benbakhti B, Rousseau M, De Jaeger JC. 2006. Study of field plate AlGaN/GaN HEMTs by means of a 2D-hydrodynamic model for power applications European Microwave Association (EuMA), European Microwave Integrated Circuits Conference (EuMIC) :363-366 >DOI >Link

Benbakhti B, Rousseau M, De Jaeger JC. 2006. Study of field plate AlGaN/GaN HEMTs by means of a 2D-hydrodynamic model for power applications European Microwave Association (EuMA), European Microwave Integrated Circuits Conference (EuMIC) :363-366 >DOI >Link

Journal article

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2014. Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs IEEE ELECTRON DEVICE LETTERS, 35 :160-162 >DOI >Link >Public Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang WD, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker PR. 2014. Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :1307-1315 >DOI >Link >Public Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2014. Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs IEEE ELECTRON DEVICE LETTERS, 35 :160-162 >DOI >Link >Public Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang WD, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker PR. 2014. Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :1307-1315 >DOI >Link >Public Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2014. Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs IEEE ELECTRON DEVICE LETTERS, 35 :160-162 >DOI >Link >Public Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang WD, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker PR. 2014. Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :1307-1315 >DOI >Link >Public Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Duan M, Zhang W, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2013. Towards understanding hole traps and NBTI of Ge/GeO2/Al 2O3 structure Microelectronic Engineering, 109 :43-45 >DOI

Ma J, Zhang JF, Ji Z, Benbakhti B, Duan M, Zhang W, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2013. Towards understanding hole traps and NBTI of Ge/GeO2/Al 2O3 structure Microelectronic Engineering, 109 :43-45 >DOI

Ma J, Zhang JF, Ji Z, Benbakhti B, Duan M, Zhang W, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2013. Towards understanding hole traps and NBTI of Ge/GeO2/Al 2O3 structure Microelectronic Engineering, 109 :43-45 >DOI

Hellings G, Hikavyy A, Mitard J, Witters L, Benbakhti B, Alian A, Waldron N, Bender H, Eneman G, Krom R, Schulze A, Vandervorst W, Loo R, Heyns M, Meuris M, Hoffmann T, De Meyer K. 2012. The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures THIN SOLID FILMS, 520 :3326-3331 >DOI >Link

Benbakhti B, Martinez A, Kalna K, Hellings G, Eneman G, De Meyer K, Meuris M. 2012. Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47As Implant Free Quantum Well MOSFET IEEE TRANSACTIONS ON NANOTECHNOLOGY, 11 :808-817 >DOI >Link

Benbakhti B, Zhang JF, Ji Z, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2012. Characterization of electron traps in Si-capped Ge MOSFETs with HfO 2/SiO2 gate stack IEEE Electron Device Letters, 33 :1681-1683 >DOI

Hellings G, Hikavyy A, Mitard J, Witters L, Benbakhti B, Alian A, Waldron N, Bender H, Eneman G, Krom R, Schulze A, Vandervorst W, Loo R, Heyns M, Meuris M, Hoffmann T, De Meyer K. 2012. The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures THIN SOLID FILMS, 520 :3326-3331 >DOI >Link

Benbakhti B, Martinez A, Kalna K, Hellings G, Eneman G, De Meyer K, Meuris M. 2012. Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47As Implant Free Quantum Well MOSFET IEEE TRANSACTIONS ON NANOTECHNOLOGY, 11 :808-817 >DOI >Link

Benbakhti B, Zhang JF, Ji Z, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2012. Characterization of electron traps in Si-capped Ge MOSFETs with HfO 2/SiO2 gate stack IEEE Electron Device Letters, 33 :1681-1683 >DOI

Hellings G, Hikavyy A, Mitard J, Witters L, Benbakhti B, Alian A, Waldron N, Bender H, Eneman G, Krom R, Schulze A, Vandervorst W, Loo R, Heyns M, Meuris M, Hoffmann T, De Meyer K. 2012. The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures THIN SOLID FILMS, 520 :3326-3331 >DOI >Link

Benbakhti B, Martinez A, Kalna K, Hellings G, Eneman G, De Meyer K, Meuris M. 2012. Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47As Implant Free Quantum Well MOSFET IEEE TRANSACTIONS ON NANOTECHNOLOGY, 11 :808-817 >DOI >Link

Benbakhti B, Zhang JF, Ji Z, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2012. Characterization of electron traps in Si-capped Ge MOSFETs with HfO 2/SiO2 gate stack IEEE Electron Device Letters, 33 :1681-1683 >DOI

Benbakhti B, Chan K, Towie E, Kalna K, Riddet C, Wang X, Eneman G, Hellings G, De Meyer K, Meuris M, Asenov A. 2011. Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach SOLID-STATE ELECTRONICS, 63 :14-18 >DOI >Link

Islam A, Benbakhti B, Kalna K. 2011. Monte Carlo Study of Ultimate Channel Scaling in Si and In0.3Ga0.7As Bulk MOSFETs IEEE TRANSACTIONS ON NANOTECHNOLOGY, 10 :1424-1432 >DOI >Link

Benbakhti B, Chan K, Towie E, Kalna K, Riddet C, Wang X, Eneman G, Hellings G, De Meyer K, Meuris M, Asenov A. 2011. Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach SOLID-STATE ELECTRONICS, 63 :14-18 >DOI >Link

Islam A, Benbakhti B, Kalna K. 2011. Monte Carlo Study of Ultimate Channel Scaling in Si and In0.3Ga0.7As Bulk MOSFETs IEEE TRANSACTIONS ON NANOTECHNOLOGY, 10 :1424-1432 >DOI >Link

Benbakhti B, Chan K, Towie E, Kalna K, Riddet C, Wang X, Eneman G, Hellings G, De Meyer K, Meuris M, Asenov A. 2011. Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach SOLID-STATE ELECTRONICS, 63 :14-18 >DOI >Link

Islam A, Benbakhti B, Kalna K. 2011. Monte Carlo Study of Ultimate Channel Scaling in Si and In0.3Ga0.7As Bulk MOSFETs IEEE TRANSACTIONS ON NANOTECHNOLOGY, 10 :1424-1432 >DOI >Link

Barkad HA, Soltani A, Mattalah M, Gerbedoen J-C, Rousseau M, De Jaeger J-C, BenMoussa A, Mortet V, Haenen K, Benbakhti B, Moreau M, Dupuis R, Ougazzaden A. 2010. Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes JOURNAL OF PHYSICS D-APPLIED PHYSICS, 43 :465104-465104 >DOI >Link

Benbakhti B, Ayubi-Moak JS, Kalna K, Lin D, Hellings G, Brammertz G, De Meyer K, Thayne I, Asenov A. 2010. Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures MICROELECTRONICS RELIABILITY, 50 :360-364 >DOI >Link

Barkad HA, Soltani A, Mattalah M, Gerbedoen J-C, Rousseau M, De Jaeger J-C, BenMoussa A, Mortet V, Haenen K, Benbakhti B, Moreau M, Dupuis R, Ougazzaden A. 2010. Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes JOURNAL OF PHYSICS D-APPLIED PHYSICS, 43 :465104-465104 >DOI >Link

Benbakhti B, Ayubi-Moak JS, Kalna K, Lin D, Hellings G, Brammertz G, De Meyer K, Thayne I, Asenov A. 2010. Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures MICROELECTRONICS RELIABILITY, 50 :360-364 >DOI >Link

Barkad HA, Soltani A, Mattalah M, Gerbedoen J-C, Rousseau M, De Jaeger J-C, BenMoussa A, Mortet V, Haenen K, Benbakhti B, Moreau M, Dupuis R, Ougazzaden A. 2010. Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes JOURNAL OF PHYSICS D-APPLIED PHYSICS, 43 :465104-465104 >DOI >Link

Benbakhti B, Ayubi-Moak JS, Kalna K, Lin D, Hellings G, Brammertz G, De Meyer K, Thayne I, Asenov A. 2010. Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures MICROELECTRONICS RELIABILITY, 50 :360-364 >DOI >Link

Benbakhti B, Soltani A, Kalna K, Rousseau M, De Jaeger J-C. 2009. Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices IEEE TRANSACTIONS ON ELECTRON DEVICES, 56 :2178-2185 >DOI >Link

Benbakhti B, Soltani A, Kalna K, Rousseau M, De Jaeger J-C. 2009. Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices IEEE TRANSACTIONS ON ELECTRON DEVICES, 56 :2178-2185 >DOI >Link

Benbakhti B, Soltani A, Kalna K, Rousseau M, De Jaeger J-C. 2009. Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices IEEE TRANSACTIONS ON ELECTRON DEVICES, 56 :2178-2185 >DOI >Link

Soltani A, Barkad HA, Mattalah M, Benbakhti B, De Jaeger J-C, Chong YM, Zou YS, Zhang WJ, Lee ST, BenMoussa A, Giordanengo B, Hochedez J-F. 2008. 193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors APPLIED PHYSICS LETTERS, 92 :053501-053501 >DOI >Link

Soltani A, Barkad HA, Mattalah M, Benbakhti B, De Jaeger J-C, Chong YM, Zou YS, Zhang WJ, Lee ST, BenMoussa A, Giordanengo B, Hochedez J-F. 2008. 193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors APPLIED PHYSICS LETTERS, 92 :053501-053501 >DOI >Link

Soltani A, Barkad HA, Mattalah M, Benbakhti B, De Jaeger J-C, Chong YM, Zou YS, Zhang WJ, Lee ST, BenMoussa A, Giordanengo B, Hochedez J-F. 2008. 193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors APPLIED PHYSICS LETTERS, 92 :053501-053501 >DOI >Link

Benbakhti B, Rousseau M, De Jaeger J-C. 2007. Physical study of the dissipated power area in high electron mobility transistors for thermal modelling MICROELECTRONICS JOURNAL, 38 :7-13 >DOI >Link

Benbakhti B, Rousseau M, De Jaeger J-C. 2007. Physical study of the dissipated power area in high electron mobility transistors for thermal modelling MICROELECTRONICS JOURNAL, 38 :7-13 >DOI >Link

Benbakhti B, Rousseau M, De Jaeger J-C. 2007. Physical study of the dissipated power area in high electron mobility transistors for thermal modelling MICROELECTRONICS JOURNAL, 38 :7-13 >DOI >Link

Benbakhti B, Rousseau M, Soltani A, De Jaeger J-C. 2006. Analysis of thermal effect influence in gallium-nitride-based TLM structures by means of a transport-thermal modeling IEEE TRANSACTIONS ON ELECTRON DEVICES, 53 :2237-2242 >DOI >Link

Benbakhti B, Rousseau M, Soltani A, De Jaeger J-C. 2006. Analysis of thermal effect influence in gallium-nitride-based TLM structures by means of a transport-thermal modeling IEEE TRANSACTIONS ON ELECTRON DEVICES, 53 :2237-2242 >DOI >Link

Benbakhti B, Rousseau M, Soltani A, De Jaeger J-C. 2006. Analysis of thermal effect influence in gallium-nitride-based TLM structures by means of a transport-thermal modeling IEEE TRANSACTIONS ON ELECTRON DEVICES, 53 :2237-2242 >DOI >Link