Liverpool Skyline

Department of Electronics and Electrical Engineering

Dr Firas Hatem

Biography

Research Experience
Physics-based modelling, circuit design and testing of non-volatile memories (RRAM), modelling of electronic and ionic transport in Nano-Electronic devices/interfaces, CMOS circuit applications, Nano- and Micro- Electronics and related fields.

Research Achievements
• Published in IEEE Transactions and other International journals and conferences.
• IOP Semiconductor Science and Technology Highlights of 2015 - IOP Publishing - UK.
• PhD thesis accepted for presentation at DATE (Design, Automation & Test in Europe) 2017 PhD Forum in Switzerland.
• Lecture presentation at 2017 IEEE Int. Symp. on Circuits & Systems, Baltimore, Maryland, USA.

Technical Reviewer:
• IEEE Transactions on Nanotechnology.
• IEEE Transactions on Circuits and Systems I: Regular Papers.
• Nanotechnology (IOP).
• Journal of Physics D: Applied Physics (IOP).
• IEEE International Conferences.

Professional Industry Experience
• Electronic engineer at Alcatel-Lucent/TCO (2008-2011) in the field of optical fiber cables.

Degrees

2017, The University of Nottingham, United Kingdom, Ph.D, Electronics Engineering
2012, The University of Nottingham, United kingdom, MS.c in Electronic Communications and Computer Engineering with Distinction

Academic appointments

Postdoctoral Research Associate in Nanoelectronics, Electronics and Electrical Engineering, Liverpool John Morres University, 2017 - present

Publications

Journal article

Chai Z, Zhang W, Freitas P, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS, Hall S, Chalker P, Robertson J. 2018. The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique IEEE Electron Device Letters, >DOI

Ho PWC, Hatem FO, Almurib HAF, Kumar TN. 2016. Comparison between Pt/TiO 2 /Pt and Pt/TaO /TaO /Pt based bipolar resistive switching devices Journal of Semiconductors, 37 :064001-064001 >DOI

Hatem FO, Kumar TN, Almurib HAF. 2016. A SPICE Model of the Ta2O5/TaOx Bi-Layered RRAM IEEE Transactions on Circuits and Systems I: Regular Papers, 63 :1487-1498 >DOI

Hatem FO, Ho PWC, Kumar TN, Almurib HAF. 2015. Modeling of bipolar resistive switching of a nonlinear MISM memristor Semiconductor Science and Technology, 30 :115009-115009 >DOI

Poster

Hatem FO, Kumar TN, Almurib HAF. 2017. Ph.D Thesis: Bipolar Resistive Switching of Bi-Layered Pt/Ta2O5/TaOx/Pt RRAM–Physics-based Modelling, Circuit Design and Testing Design, Automation &Test in Europe Conference & Exhibition (DATE 2017), Switzerland >Link

Conference publication

Hatem FO, Kumar TN. A low-area asynchronous router for clock-less network-on-chip on a FPGA >DOI

Yee CJ, Hatem FO, Kumar TN, Almurib HAF. Compact SPICE modeling of STT-MTJ device >DOI

Hatem FO, Ho PWC, Almurib HAF, Kumar TN. Comparison on TiO2 and TaO2 based bipolar resistive switching devices 2014 2nd International Conference on Electronic Design (ICED), >DOI

Ho PWC, Hatem FO, Almurib HAF, Kumar TN. Enhanced SPICE memristor model with dynamic ground 2015 IEEE International Circuits and Systems Symposium (ICSyS) >DOI

Hatem FO, Kumar TN, Almurib HAF. A SPICE Model of the Ta2O5/TaOx Bi-Layered RRAM IEEE International Symposium on Circuits & Systems, Baltimore, Maryland, USA

Thesis/Dissertation

Hatem FO. Bipolar resistive switching of bi-layered Pt/Ta2O5/TaOx/Pt RRAM : physics-based modelling, circuit design and testing Kumar TN, Almurib HAM.

Engagement & Impact

Award:

Research Highlights of 2015, Semiconductor Science and Technology, Institute of Physics (IOP), United kingdom, http://iopscience.iop.org/journal/0268-1242/page/Highlights-of-2015

Membership of professional bodies:

Member, IEEE, Institute of Electrical and Electronics Engineers (IEEE), https://www.ieee.org/

MIET, Institution of Engineering and Technology (IET), http://www.theiet.org/