Liverpool Skyline

Department of Electronics and Electrical Engineering

Dr Firas Hatem

Biography

Research Experience
Electrical characterisation, physics-based modelling and circuit design of non-volatile memories (RRAM) and Ovonic Threshold Switching (OTS) devices, modelling of electronic and ionic transport in Nano-Electronic devices/interfaces, CMOS circuit applications, Nano- and Micro- Electronics and related fields.

Research Highlights
• Visiting Fellow at Imec, Leuven-Belgium (3 Months).
• Published in IEEE Transactions and other reputed journals and flagship conferences such us IEDM and VLSI.
• IOP Semiconductor Science and Technology Highlights of 2015 - IOP Publishing - UK.
• PhD thesis accepted for presentation at DATE (Design, Automation & Test in Europe) 2017 PhD Forum in Switzerland.
• Lecture presentation at 2017 IEEE Int. Symp. on Circuits & Systems, Baltimore, Maryland, USA.

Technical Reviewer:
• IEEE Transactions on Electron Devices.
• IEEE Transactions on Circuits and Systems I: Regular Papers.
• IEEE Transactions on Nanotechnology.
• Nanotechnology (IOP).
• Journal of Physics D: Applied Physics (IOP).
• IEEE International Conferences.

Management and Supervision Experience:
• Site Engineer and Site Supervisor at Alcatel-Lucent North Africa (3 years: 2008-2011).

Degrees

2017, The University of Nottingham, United Kingdom, Ph.D, Electronics Engineering
2012, The University of Nottingham, United kingdom, MS.c in Electronic Communications and Computer Engineering with Distinction

Academic appointments

Postdoctoral Research Associate in Nanoelectronics, Electronics and Electrical Engineering, Liverpool John Morres University, 2017 - present
Teaching Assistant, Electrical and Electronics Engineering, The University of Nottingham Malaysia Campus, 2012 - 2015

Publications

Conference publication

Hatem F, Chai Z, Zhang W, Fantini A, Degraeve R, Clima S, Garbin D, Robertson J, Guo Y, Zhang JF, Marsland J, Freitas P, Goux L, Kar G. 2019. Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme IEEE International Electron Device Meeting (IEDM), San Francisco, USA. Public Url

Chai Z, Zhang W, Degraeve R, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2019. Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors 2019 Symposia on VLSI Technology and Circuits DOI Public Url

Hatem FO, Kumar TN, Almurib HAF. A SPICE Model of the Ta2O5/TaOx Bi-Layered RRAM IEEE International Symposium on Circuits & Systems, Baltimore, Maryland, USA

Ho PWC, Hatem FO, Almurib HAF, Kumar TN. Enhanced SPICE memristor model with dynamic ground 2015 IEEE International Circuits and Systems Symposium (ICSyS) DOI Publisher Url

Hatem FO, Ho PWC, Almurib HAF, Kumar TN. Comparison on TiO2 and TaO2 based bipolar resistive switching devices 2014 2nd International Conference on Electronic Design (ICED), DOI Publisher Url

Yee CJ, Hatem FO, Kumar TN, Almurib HAF. Compact SPICE modeling of STT-MTJ device DOI Publisher Url

Hatem FO, Kumar TN. A low-area asynchronous router for clock-less network-on-chip on a FPGA DOI Publisher Url

Journal article

Chai Z, Zhang W, Degraeve R, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar GS. 2019. Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors IEEE Electron Device Letters, :1-1 DOI Author Url Publisher Url Public Url

Chai Z, Freitas P, Zhang W, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS. 2018. Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url

Chai Z, Zhang W, Freitas P, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS, Hall S, Chalker P, Robertson J. 2018. The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique IEEE Electron Device Letters, 39 :955-958 DOI Author Url Publisher Url Public Url

Hatem FO, Ho PWC, Kumar TN, Almurib HAF. 2015. Modeling of bipolar resistive switching of a nonlinear MISM memristor Semiconductor Science and Technology, 30 :115009-115009 DOI

Hatem FO, Kumar TN, Almurib HAF. A SPICE Model of the Ta2O5/TaOx Bi-Layered RRAM IEEE Transactions on Circuits and Systems I: Regular Papers, 63 :1487-1498 DOI

Ho PWC, Hatem FO, Almurib HAF, Kumar TN. Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices Journal of Semiconductors, 37 :064001-064001 DOI

Chapters

Hatem F. 2018. RRAM Devices: Underlying Physics, SPICE Modeling, and Circuit Applications Nanoscale Devices Physics, Modeling, and Their Application CRC Press 9781351670210 DOI Publisher Url

Poster

Hatem FO, Kumar TN, Almurib HAF. 2017. Ph.D Thesis: Bipolar Resistive Switching of Bi-Layered Pt/Ta2O5/TaOx/Pt RRAM–Physics-based Modelling, Circuit Design and Testing Design, Automation &Test in Europe Conference & Exhibition (DATE 2017), Switzerland Author Url

Thesis/Dissertation

Hatem FO. Bipolar resistive switching of bi-layered Pt/Ta2O5/TaOx/Pt RRAM : physics-based modelling, circuit design and testing Kumar TN, Almurib HAM.

Engagement & Impact

Award:

Research Highlights of 2015, Semiconductor Science and Technology, Institute of Physics (IOP), United kingdom, http://iopscience.iop.org/journal/0268-1242/page/Highlights-of-2015. 2015

Membership of professional bodies:

Member, IEEE, Institute of Electrical and Electronics Engineers (IEEE), https://www.ieee.org/.

MIET, Institution of Engineering and Technology (IET), http://www.theiet.org/.