Electrical characterisation, physics-based modelling and circuit design of non-volatile memories (RRAM), modelling of electronic and ionic transport in Nano-Electronic devices/interfaces, CMOS circuit applications, Nano- and Micro- Electronics and related fields.
• Published in IEEE Transactions and other International journals and conferences.
• IOP Semiconductor Science and Technology Highlights of 2015 - IOP Publishing - UK.
• PhD thesis accepted for presentation at DATE (Design, Automation & Test in Europe) 2017 PhD Forum in Switzerland.
• Lecture presentation at 2017 IEEE Int. Symp. on Circuits & Systems, Baltimore, Maryland, USA.
• IEEE Transactions on Nanotechnology.
• IEEE Transactions on Circuits and Systems I: Regular Papers.
• Nanotechnology (IOP).
• Journal of Physics D: Applied Physics (IOP).
• IEEE International Conferences.
Professional Industry Experience
• Electronic engineer at Alcatel-Lucent/TCO (2008-2011) in the field of optical fiber cables.
2017, The University of Nottingham, United Kingdom, Ph.D, Electronics Engineering
2012, The University of Nottingham, United kingdom, MS.c in Electronic Communications and Computer Engineering with Distinction
Postdoctoral Research Associate in Nanoelectronics, Electronics and Electrical Engineering, Liverpool John Morres University, 2017 - present
Hatem F. 2018. RRAM Devices: Underlying Physics, SPICE Modeling, and Circuit Applications Nanoscale Devices Physics, Modeling, and Their Application CRC Press 9781351670210 >DOI
Chai Z, Freitas P, Zhang W, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS. 2018. Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network IEEE Electron Device Letters, >DOI
Chai Z, Zhang W, Freitas P, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS, Hall S, Chalker P, Robertson J. 2018. The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique IEEE Electron Device Letters, >DOI
Ho PWC, Hatem FO, Almurib HAF, Kumar TN. 2016. Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices Journal of Semiconductors, 37 :064001-064001 >DOI
Hatem FO, Kumar TN, Almurib HAF. 2016. A SPICE Model of the Ta2O5/TaOx Bi-Layered RRAM IEEE Transactions on Circuits and Systems I: Regular Papers, 63 :1487-1498 >DOI
Hatem FO, Ho PWC, Kumar TN, Almurib HAF. 2015. Modeling of bipolar resistive switching of a nonlinear MISM memristor Semiconductor Science and Technology, 30 :115009-115009 >DOI
Hatem FO, Kumar TN, Almurib HAF. 2017. Ph.D Thesis: Bipolar Resistive Switching of Bi-Layered Pt/Ta2O5/TaOx/Pt RRAM–Physics-based Modelling, Circuit Design and Testing Design, Automation &Test in Europe Conference & Exhibition (DATE 2017), Switzerland >Link
Hatem FO, Kumar TN. A low-area asynchronous router for clock-less network-on-chip on a FPGA >DOI
Yee CJ, Hatem FO, Kumar TN, Almurib HAF. Compact SPICE modeling of STT-MTJ device >DOI
Hatem FO, Ho PWC, Almurib HAF, Kumar TN. Comparison on TiO2 and TaO2 based bipolar resistive switching devices 2014 2nd International Conference on Electronic Design (ICED), >DOI
Ho PWC, Hatem FO, Almurib HAF, Kumar TN. Enhanced SPICE memristor model with dynamic ground 2015 IEEE International Circuits and Systems Symposium (ICSyS) >DOI
Hatem FO, Kumar TN, Almurib HAF. A SPICE Model of the Ta2O5/TaOx Bi-Layered RRAM IEEE International Symposium on Circuits & Systems, Baltimore, Maryland, USA
Hatem FO. Bipolar resistive switching of bi-layered Pt/Ta2O5/TaOx/Pt RRAM : physics-based modelling, circuit design and testing Kumar TN, Almurib HAM.
Engagement & Impact
Research Highlights of 2015, Semiconductor Science and Technology, Institute of Physics (IOP), United kingdom, http://iopscience.iop.org/journal/0268-1242/page/Highlights-of-2015
Membership of professional bodies:
Member, IEEE, Institute of Electrical and Electronics Engineers (IEEE), https://www.ieee.org/
MIET, Institution of Engineering and Technology (IET), http://www.theiet.org/