Liverpool Skyline

Department of Electronics and Electrical Engineering

Prof Jian Zhang

Prof Jian Zhang

Telephone: 0151 231 2363

Biography

Jian Fu Zhang received B.Eng. degree in electrical engineering from Xi’an Jiao Tong University in 1982 and Ph.D. degree from University of Liverpool in 1987. From 1986 to 1992, he was a Senior Research Assistant with the University of Liverpool. He joined Liverpool John Moores University (LJMU) as a Senior Lecturer in 1992, became a Reader in 1996 and a Professor in 2001. He is the area leader for Microelectronics at LJMU.
Dr Zhang is the author or coauthor of over 200 journal/conference papers, including 31 invited papers/book chapters, 52 papers in IEEE Transactions and Electron Device Letters, and 18 papers at IEDM/Symposium of VLSI Technology. He is/was a member of the technical program committee of several international conferences, including IEDM. He is the principal investigator for 5 epsrc projects.
Dr Zhang's current research interests are: (i) new materials and devices for future microelectronic industry; (ii) qualification, modelling, and aging prediction; and (iii) new characterisation techniques.

Degrees

1987, University of Liverpool, United Kingdom, PhD
1982, Xi'an Jiaotong University, China, BEng

Academic appointments

Professor in Microelectronics, Liverpool John Moores University, 2001 - present
Reader in Microelectronics, Liverpool John Moores University, 1996 - 2001
Senior Lecturer, Liverpool John Moores University, 1992 - 1996
Member, IET, 1991 - present
Senior Research Assistant, University of Liverpool, 1986 - 1992

Publications

Journal article

Chai Z, Freitas P, Zhang W, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS. 2018. Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network IEEE Electron Device Letters, >DOI

Gao R, Ji Z, Zhang JF, Marsland J, Zhang W. 2018. As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI) IEEE Transactions on Electron Devices, 65 :3662-3668 >DOI

Chai Z, Zhang W, Freitas P, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS, Hall S, Chalker P, Robertson J. 2018. The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique IEEE Electron Device Letters, >DOI

Ma J, Chai Z, Zhang W, Zhang J, Ji Z, Benbakhti B, Govoreanu B, Simoen E, Goux L, Belmonte A, Degraeve R, Kar G, Jurczak M. 2018. Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution IEEE Transactions on Electron Devices, 65 :970-977 >DOI

Zhang JF, Ji Z, Zhang W. 2018. As-grown-Generation (AG) Model of NBTI: a shift from fitting test data to prediction Microelectronics Reliability, 80 :109-123 >DOI

Kang J, Yu Z, Wu L, Fang Y, Wang Z, Cai Y, Ji Z, Zhang JF, Wang R, Yang Y, Huang R. 2017. Time-Dependent Variability in RRAM-based Analog Neuromorphic System for Pattern Recognition Technical Digest of the IEEE International Electron Devices Meeting (IEDM),, :147-150

Sedghi N, Li H, Brunell IF, Dawson K, Guo Y, Potter RJ, Gibbon JT, Dhanak VR, Zhang WD, Zhang JF, Hall S, Robertson J, Chalker PR. 2017. Enhanced switching stability in Ta 2 O 5 resistive RAM by fluorine doping Applied Physics Letters, 111 :092904-092904 >DOI

Chai Z, Ma J, Zhang WD, Govoreanu B, Zhang JF, Ji Z, Jurczak M. 2017. Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals IEEE Transactions on Electron Devices, :1-7 >DOI

Gao R, Ji Z, Manut A, zhang JF, Franco J, Hatta SWM, Zhang W, Kaczer B, Linten D, Groeseneken G. 2017. NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling IEEE Transactions on Electron Devices, 64 :4011-4017 >DOI

Duan M, Zhang JF, Ji Z, Zhang W, Kaczer B, Asenov A. 2017. Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs IEEE Transactions on Electron Devices, 64 :2478-2484

Gao R, Manut A, Ji Z, Ma J, Duan M, Zhang J, Franco J, Hatta S, Zhang W, Kaczer B, Vigar D, Linten D, Groeseneken G. 2017. Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation IEEE Transactions on Electron Devices, 64 :1467-1473 >DOI

Sedghi N, Li H, Brunell IF, Dawson K, Potter RJ, Guo Y, Gibbon JT, Dhanak VR, Zhang W, Zhang JF, Robertson J, Hall S, Chalker PR. 2017. The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM Applied Physics Letters, 110 >DOI

Ma J, Zhang W, Zhang JF, Benbakhti B, Ji Z, Mitard J, Arimura H. 2016. A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, :3830-3836 >DOI

Duan M, Zhang JF, Ji Z, Zhang W, Vigar D, Asenov A, Gerrer L, Chandra V, Aitken R, Kaczer B. 2016. Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging IEEE TRANSACTIONS ON ELECTRON DEVICES, :3642-3648 >DOI

Manut A, Zhang JF, duan , ji , zhang W, kaczer B, Schram T, Horiguchi, N, Groeseneken G. 2015. Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation IEEE Journal of Electron Devices Society, :15-21 >DOI

Ji Z, zhang JF, zhang W, gao R, zhang X. 2015. An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel IEEE Transactions on Electron Devices, :3633-3639 >DOI

Gao R, Ji Z, Zhang JF, Zhang WD, Hatta SFWM, Niblock J, Bachmayr P, Stauffer L, Wright K, Greer S. 2015. A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 :221-226 >DOI >Link

Robinson C, Zhang WD, Tang B, Zheng XF, Zhang JF. 2014. Instabilities induced by electron trapping/detrapping in high-k gate dielectrics of Flash memories: Evaluation and Suppression Tang TA, Zhou J. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), >Link

Zhang JF, Duani M, Ji Z, Zhang W. 2014. TIME-DEPENDENT DEVICE-TO-DEVICE VARIATION ACCOUNTING FOR WITHIN-DEVICE FLUCTUATION (TVF): A NEW CHARACTERIZATION TECHNIQUE Tang TA, Zhou J. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), >Link

Duan M, Zhang JF, Ji Z, Zhang W, Kaczer B, Schram T, Ritzenthaler R, Thean A, Groeseneken G, Asenov A. 2014. Time-dependent variation: A new defect-based prediction methodology 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, >Link

Ren P, Wang R, Ji Z, Hao P, Jiang X, Guo S, Luo M, Duan M, Zhang JF, Wang J, Liu J, Bu W, Wu J, Wong W, Yu S, Wu H, Lee S-W, Xu N, Huang R. 2014. New Insights into the Design for End-of-life Variability of NBTI in Scaled High-kappa/Metal-gate Technology for the nano-Reliability Era 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), >Link

Ji Z, Hatta SWM, Zhang JF, Zhang W, Niblock J, Bachmayr P, Stauffer L, Wright K, Greer S. 2014. A new technique for probing the energy distribution of positive charges in gate dielectric 2014 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), :73-78 >Link

Tang BJ, Zhang WD, Breuil L, Robinson C, Wang YQ, Toledano-Luque M, Van den Bosch G, Zhang JF, Van Houdt J. 2014. Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations MICROELECTRONICS RELIABILITY, 54 :2258-2261 >DOI >Link

Hatta SWM, Ji Z, Zhang JF, Zhang WD, Soin N, Kaczer B, Gendt SD, Groeseneken G. 2014. Energy distribution of positive charges in high-k dielectric MICROELECTRONICS RELIABILITY, 54 :2329-2333 >DOI >Link

Ji Z, Zhang JF, Zhang W, Zhang X, Kaczer B, De Gendt S, Groeseneken G, Ren P, Wang R, Huang R. 2014. A single device based Voltage Step Stress (VSS) Technique for fast reliability screening 2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, >Link

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2014. Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :3081-3089 >DOI >Link

Tang B, Zhang W, Toledano-Luque M, Zhang JF, Degraeve R, Ji Z, Arreghini A, Van den Bosch G, Van Houdt J. 2014. Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :1501-1507 >DOI >Link

Tang B, Zhang WD, Degraeve R, Breuil L, Blomme P, Zhang JF, Ji Z, Zahid M, Toledano-Luque M, Van den Bosch G, Van Houdt J. 2014. Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-kappa Intergate Dielectrics of Flash Memory Cells IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :1299-1306 >DOI >Link

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang WD, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker PR. 2014. Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :1307-1315 >DOI >Link

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2014. Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs IEEE ELECTRON DEVICE LETTERS, 35 :160-162 >DOI >Link

Ji Z, Hatta SFWM, Zhang JF, Ma JG, Zhang W, Soin N, Kaczer B, De Gendt S, Groeseneken G. 2013. Negative Bias Temperature Instability Lifetime Prediction: Problems and Solutions 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), >Link

Duan M, Zhang JF, Ji Z, Ma JG, Zhang W, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2013. Key issues and techniques for characterizing Time-dependent Device-to-Device Variation of SRAM 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), >Link

Duan M, Zhang JF, Ji Z, Zhang W. 2013. Defect losses under different processes, stress, recovery, and anneal conditions Lin Q, Claeys C, Huang D, Wu H, Kuo Y, Huang R, Lai K, Zhang Y, Guo Z, Wang S, Liu R, Jiang T, Song P, Lam C, Xiong J, Chen K. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013), 52 :929-934 >DOI >Link

Ji Z, Gillbert J, Zhang JF, Zhang W. 2013. A new Ultra-Fast Single Pulse technique (UFSP) for channel effective mobility evaluation in MOSFETs IEEE International Conference on Microelectronic Test Structures, :64-69 >DOI

Ma J, Zhang JF, Ji Z, Benbakhti B, Duan M, Zhang W, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2013. Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3structure Microelectronic Engineering, 109 :43-45 >DOI

Tang B, Toledano-Luque M, Zhang WD, Van Den Bosch G, Degraeve R, Zhang JF, Van Houdt J. 2013. Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization Microelectronic Engineering, 109 :39-42 >DOI

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2013. New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation IEEE Transactions on Electron Devices, 60 :2505-2511 >DOI

Liu WJ, Sun XW, Tran XA, Fang Z, Wang ZR, Wang F, Wu L, Zhang JF, Wei J, Zhu HL, Yu HY. 2013. Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect Transistors IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 :2682-2686 >DOI >Link

Tang B, Robinson C, Zhang WD, Zhang JF, Degraeve R, Blomme P, Toledano-Luque M, Van Den Bosch G, Govoreanu B, Van Houdt J. 2013. Read and pass disturbance in the programmed states of floating gate flash memory cells with high-κ interpoly gate dielectric stacks IEEE Transactions on Electron Devices, 60 :2261-2267 >DOI

Hatta SWM, Ji Z, Zhang JF, Duan M, Zhang WD, Soin N, Kaczer B, De Gendt S, Groeseneken G. 2013. Energy Distribution of Positive Charges in Gate Dielectric: Probing Technique and Impacts of Different Defects IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 :1745-1753 >DOI >Link

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2013. New insights into defect loss, slowdown, and device lifetime enhancement IEEE Transactions on Electron Devices, 60 :413-419 >DOI

Zhang JF, Ji Z, Duan M, Zhang W. 2012. Development of new characterisation technique for interface states beyond bandgap ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, >DOI

Zhang WD, Robinson C, Zheng XF, Zhang JF. 2012. Characterisation of electron traps in high-k dielectric stacks for Flash memory applications using fast pulse techniques ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, >DOI

Benbakhti B, Zhang JF, Ji Z, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2012. Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2gate stack IEEE Electron Device Letters, 33 :1681-1683 >DOI

Ji Z, Zhang JF, Zhang W. 2012. A New Mobility Extraction Technique Based on Simultaneous Ultrafast I-d-V-g and C-cg-V-g Measurements in MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :1906-1914 >DOI >Link

Tang B, Zhang WD, Zhang JF, Van den Bosch G, Toledano-Luque M, Govoreanu B, Van Houdt J. 2012. Investigation of Abnormal V-TH/V-FB Shifts Under Operating Conditions in Flash Memory Cells With Al2O3 High-kappa Gate Stacks IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :1870-1877 >DOI >Link

Duan M, Zhang JF, Ji Z, Zhang W, Kaczer B, De Gendt S, Groeseneken G. 2012. Defect Loss: A New Concept for Reliability of MOSFETs IEEE ELECTRON DEVICE LETTERS, 33 :480-482 >DOI >Link

Liu WJ, Sun XW, Tran XA, Fang Z, Wang ZR, Wang F, Wu L, Zhang JF, Wei J, Zhu HL, Yu HY. 2012. Vth Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 12 :478-481 >DOI >Link

Liu WJ, Sun XW, Fang Z, Wang ZR, Tran XA, Wang F, Wu L, Ng GI, Zhang JF, Wei J, Zhu HL, Yu HY. 2012. Positive Bias-Induced V-th Instability in Graphene Field Effect Transistors IEEE ELECTRON DEVICE LETTERS, 33 :339-341 >DOI >Link

Ji Z, Zhang JF, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2012. Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :783-790 >DOI >Link

Zheng XF, Robinson C, Zhang WD, Zhang JF, Govoreanu B, Van Houdt J. 2011. Electron Trapping in HfAlO High-kappa Stack for Flash Memory Applications: An Origin of V-th Window Closure During Cycling Operations IEEE TRANSACTIONS ON ELECTRON DEVICES, 58 :1344-1351 >DOI >Link

Lin L, Ji Z, Zhang JF, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2011. A Single Pulse Charge Pumping Technique for Fast Measurements of Interface States IEEE TRANSACTIONS ON ELECTRON DEVICES, 58 :1490-1498 >DOI >Link

Zhang JF, Ji Z, Lin L, Zhang W. 2010. Effective threshold voltage shift: A measure for NBTI removing uncertainty in mobility degradation ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, :1600-1603 >DOI

Zheng XF, Zhang WD, Govoreanu B, Zhang JF, van Houdt J. 2010. A New Multipulse Technique for Probing Electron Trap Energy Distribution in High-kappa Materials for Flash Memory Application IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :2484-2492 >DOI >Link

Zheng XF, Zhang WD, Govoreanu B, Aguado DR, Zhang JF, Van Houdt J. 2010. Energy and Spatial Distributions of Electron Traps Throughout SiO2/Al2O3 Stacks as the IPD in Flash Memory Application IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :288-296 >DOI >Link

Ji Z, Lin L, Zhang JF, Kaczer B, Groeseneken G. 2010. NBTI Lifetime Prediction and Kinetics at Operation Bias Based on Ultrafast Pulse Measurement IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :228-237 >DOI >Link

Ji Z, Zhang JF, Zhang W, Groeseneken G, Pantisano L, De Gendt S, Heyns MM. 2009. An assessment of the mobility degradation induced by remote charge scattering APPLIED PHYSICS LETTERS, 95 >DOI >Link

Chang MH, Zhao CZ, Ji Z, Zhang JF, Groeseneken G, Pantisano L, De Gendt S, Heyns MM. 2009. On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks JOURNAL OF APPLIED PHYSICS, 105 >DOI >Link

Ji Z, Zhang JF, Chang MH, Kaczer B, Groeseneken G. 2009. An Analysis of the NBTI-Induced Threshold Voltage Shift Evaluated by Different Techniques IEEE TRANSACTIONS ON ELECTRON DEVICES, 56 :1086-1093 >DOI >Link

Zhang JF, Chang MH, Ji Z, Lin L, Ferain I, Groeseneken G, Pantisano L, De Gendt S, Heyns MM. 2008. Dominant Layer for Stress-Induced Positive Charges in Hf-Based Gate Stacks IEEE ELECTRON DEVICE LETTERS, 29 :1360-1363 >DOI >Link

Zhang WD, Govoreanu B, Zheng XF, Aguado DR, Rosmeulen M, Blomme P, Zhang JF, Van Houdt J. 2008. Two-pulse C-V: A new method for characterizing electron traps in the bulk of SiO2/high-k dielectric stacks IEEE ELECTRON DEVICE LETTERS, 29 :1043-1046 >DOI >Link

Efthymiou E, Bernardini S, Zhang JF, Volkos SN, Hamilton B, Peaker AR. 2008. Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment THIN SOLID FILMS, 517 :207-208 >DOI >Link

Zhao CZ, Zhang JF, Chang MH, Peaker AR, Hall S, Groeseneken G, Pantisano L, De Gendt S, Heyns M. 2008. Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect IEEE TRANSACTIONS ON ELECTRON DEVICES, 55 :1647-1656 >DOI >Link

Zhang JF, Zhao CZ, Chang MH, Zahid MB, Peaker AR, Hall S, Groeseneken G, Pantisano L, De Gendt S, Heyns M. 2008. Impact of different defects on the kinetics of negative bias temperature instability of hafnium stacks APPLIED PHYSICS LETTERS, 92 >DOI >Link

Zhao CZ, Zhang JF, Chang MH, Peaker AR, Hall S, Groeseneken G, Pantisano L, De Gendt S, Heyns M. 2008. Process-induced positive charges in Hf-based gate stacks JOURNAL OF APPLIED PHYSICS, 103 >DOI >Link

Zhao CZ, Zahid MB, Zhang JF, Groeseneken G, Degraeve R, De Gendt S. 2007. Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics APPLIED PHYSICS LETTERS, 90 >DOI >Link

Chang MH, Zhang JF. 2007. On positive charge formed under negative bias temperature stress JOURNAL OF APPLIED PHYSICS, 101 >DOI >Link

Zhang JF, Chang MH, Groeseneken G. 2007. Effects of measurement temperature on NBTI IEEE ELECTRON DEVICE LETTERS, 28 :298-300 >DOI >Link

Zhang JF, Zhao CZ, Zahid MB, Groeseneken G, Degraeve R, De Gendt S. 2006. An assessment of the location of As-grown electron traps in HfO2/HfSiO stacks IEEE ELECTRON DEVICE LETTERS, 27 :817-820 >DOI >Link

Zhao CZ, Zhang JF, Zahid MB, Govoreanu B, Groeseneken G, De Gendt S. 2006. Determination of capture cross sections for as-grown electron traps in HfO2/HfSiO stacks JOURNAL OF APPLIED PHYSICS, 100 >DOI >Link

Chang MH, Zhang JF, Zhang WD. 2006. Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides IEEE TRANSACTIONS ON ELECTRON DEVICES, 53 :1347-1354 >DOI >Link

Zhao CZ, Zhang JF, Zahid MB, Groeseneken G, Degraeve R, De Gendt S. 2006. Impact of gate materials on positive charge formation in HfO2/SiO2 stacks APPLIED PHYSICS LETTERS, 89 >DOI >Link

Zhang WD, Zhang JF, Zhao CZ, Chang MH, Groeseneken G, Degraeve R. 2006. Electrical signature of the defect associated with gate oxide breakdown IEEE ELECTRON DEVICE LETTERS, 27 :393-395 >DOI >Link

Wang YG, Xu MZ, Tan CH, Zhang JF, Duan XR. 2005. The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses CHINESE PHYSICS, 14 :1886-1891 >Link

Zhao CZ, Zhang JF. 2005. Effects of hydrogen on positive charges in gate oxides JOURNAL OF APPLIED PHYSICS, 97 >DOI >Link

Zhao CZ, Zhang HF, Groeseneken G, Degraeve R. 2004. Hole-traps in silicon dioxides - Part II: Generation mechanism IEEE TRANSACTIONS ON ELECTRON DEVICES, 51 :1274-1280 >DOI >Link

Chang MH, Zhang JF. 2004. On the role of hydrogen in hole-induced electron trap creation SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 :1333-1338 >DOI >Link

Zhang JF, Sii HK, Chen AH, Zhao CZ, Uren MJ, Groeseneken G, Degraeve R. 2004. Hole trap generation in gate dielectric during substrate hole injection SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 :L1-L3 >DOI >Link

Zhang JF, Zhao CZ, Chen AH, Groeseneken GD, Degraeve R. 2004. Hole traps in silicon dioxides - Part I: Properties IEEE TRANSACTIONS ON ELECTRON DEVICES, 51 :1267-1273 >DOI >Link

Zhang JF, Zhao CZ, Groeseneken G, Degraeve R. 2003. Analysis of the kinetics for interface state generation following hole injection JOURNAL OF APPLIED PHYSICS, 93 :6107-6116 >DOI >Link

Zhang WD, Zhang JF, Lalor MJ, Burton DR, Groeseneken G, Degraeve R. 2003. Effects of detrapping on electron traps generated in gate oxides SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 18 :174-182 >DOI >Link

Zhang WD, Zhang JF, Lalor M, Burton D, Groeseneken GV, Degraeve R. 2002. Two types of neutral electron traps generated in the gate silicon dioxide IEEE TRANSACTIONS ON ELECTRON DEVICES, 49 :1868-1875 >DOI >Link

Zhang JF, Sii HK, Groeseneken G, Degraeve R. 2001. Hole trapping and trap generation in the gate silicon dioxide IEEE TRANSACTIONS ON ELECTRON DEVICES, 48 :1127-1135 >DOI >Link

Zhao CZ, Zhang JF, Groeseneken G, Degraeve R, Ellis JN, Beech CD. 2001. Generation of mobile hydrogenous ions in gate oxide and their potential applications ELECTRONICS LETTERS, 37 :716-717 >DOI >Link

Zhao CZ, Zhang JF, Groeseneken G, Degraeve R, Ellis JN, Beech CD. 2001. Interface state generation after hole injection JOURNAL OF APPLIED PHYSICS, 90 :328-336 >DOI >Link

Zhang JF, Zhao CZ, Groeseneken G, Degraeve R, Ellis JN, Beech CD. 2001. Hydrogen induced positive charge generation in gate oxides JOURNAL OF APPLIED PHYSICS, 90 :1911-1919 >DOI >Link

Zhang WD, Zhang JF, Uren MJ, Groeseneken G, Degraeve R, Lalor M, Burton D. 2001. On the interface states generated under different stress conditions APPLIED PHYSICS LETTERS, 79 :3092-3094 >DOI >Link

Zhang WD, Zhang JF, Uren MJ, Groeseneken G, Degraeve R, Lalor M, Burton D. 2001. Dependence of energy distributions of interface states on stress conditions MICROELECTRONIC ENGINEERING, 59 :95-99 >DOI >Link

Zhang WD, Zhang JF, Lalor M, Burton D, Groeseneken G, Degraeve R. 2001. On the mechanism of electron trap generation in gate oxides MICROELECTRONIC ENGINEERING, 59 :89-94 >DOI >Link

Zhang JF, Sii HK, Groeseneken G, Degraeve R. 2000. Degradation of oxides and oxynitrides under hot hole stress IEEE TRANSACTIONS ON ELECTRON DEVICES, 47 :378-386 >DOI >Link

Zhang JF, Sii HK, Degraeve R, Groeseneken G. 2000. Mechanism for the generation of interface state precursors JOURNAL OF APPLIED PHYSICS, 87 :2967-2977 >DOI >Link

Tan RHG, Zhang JF, Morgan R, Greenwood A. 1999. Still image compression based on 2D discrete wavelet transform ELECTRONICS LETTERS, 35 :1934-1935 >DOI >Link

Zhang JF, Eccleston W. 1998. Positive bias temperature instability in MOSFET's IEEE TRANSACTIONS ON ELECTRON DEVICES, 45 :116-124 >DOI >Link

Zhang JF, Al-kofahi IS, Groeseneken G. 1998. Behavior of hot hole stressed SiO2/Si interface at elevated temperature JOURNAL OF APPLIED PHYSICS, 83 :843-850 >DOI >Link

Alkofahi IS, Zhang JF, Groeseneken G. 1997. Continuing degradation of the SiO2/Si interface after hot hole stress JOURNAL OF APPLIED PHYSICS, 81 :2686-2692 >DOI >Link

GOH IS, ZHANG JF, HALL S, ECCLESTON W, WERNER K. 1995. ELECTRICAL-PROPERTIES OF PLASMA-GROWN OXIDE ON MBE-GROWN SIGE SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 10 :818-828 >DOI >Link

ZHANG JF, ECCLESTON W. 1995. EFFECTS OF HIGH-FIELD INJECTION ON THE HOT-CARRIER-INDUCED DEGRADATION OF SUBMICROMETER PMOSFETS IEEE TRANSACTIONS ON ELECTRON DEVICES, 42 :1269-1276 >DOI >Link

GOH IS, HALL S, ECCLESTON W, ZHANG JF, WERNER K. 1994. INTERFACE QUALITY OF SIGE OXIDE PREPARED BY RF PLASMA ANODIZATION ELECTRONICS LETTERS, 30 :1988-1989 >DOI >Link

ZHANG JF, ECCLESTON B. 1994. DONOR-LIKE INTERFACE-TRAP GENERATION IN PMOSFETS AT ROOM-TEMPERATURE IEEE TRANSACTIONS ON ELECTRON DEVICES, 41 :740-744 >DOI >Link

TAYLOR S, ZHANG JF, ECCLESTON W. 1993. A REVIEW OF THE PLASMA OXIDATION OF SILICON AND ITS APPLICATIONS SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 8 :1426-1433 >DOI >Link

ZHANG JF, TAYLOR S, ECCLESTON W, BARLOW K. 1993. RECOVERY OF SUBMICROMETER PMOSFETS FROM HOT-CARRIER DEGRADATION BY HIGH-FIELD INJECTION ELECTRONICS LETTERS, 29 :1097-1099 >DOI >Link

ZHANG JF, TAYLOR S, ECCLESTON W. 1992. ELECTRON TRAP GENERATION IN THERMALLY GROWN SIO2 UNDER FOWLER-NORDHEIM STRESS JOURNAL OF APPLIED PHYSICS, 71 :725-734 >DOI >Link

ZHANG JF, TAYLOR S, ECCLESTON W. 1992. A QUANTITATIVE INVESTIGATION OF ELECTRON DETRAPPING IN SIO2 UNDER FOWLER-NORDHEIM STRESS JOURNAL OF APPLIED PHYSICS, 71 :5989-5996 >DOI >Link

ZHANG JF, TAYLOR S, ECCLESTON W. 1992. A COMPARATIVE-STUDY OF THE ELECTRON TRAPPING AND THERMAL DETRAPPING IN SIO2 PREPARED BY PLASMA AND THERMAL-OXIDATION JOURNAL OF APPLIED PHYSICS, 72 :1429-1435 >DOI >Link

ZHANG JF, TAYLOR S, ECCLESTON W, NIELD M. 1990. GROWTH AND PROPERTIES OF THIN SIO2-FILMS BY INDUCTIVELY COUPLED LOW-TEMPERATURE PLASMA ANODIZATION SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 5 :824-830 >DOI >Link

MATTEY NL, DOWSETT MG, PARKER EHC, WHALL TE, TAYLOR S, ZHANG JF. 1990. PARA-TYPE DELTA-DOPED LAYERS IN SILICON - STRUCTURAL AND ELECTRONIC-PROPERTIES APPLIED PHYSICS LETTERS, 57 :1648-1650 >DOI >Link

ZHANG JF, FANG MTC. 1989. DYNAMIC BEHAVIOR OF HIGH-PRESSURE ARCS NEAR THE FLOW STAGNATION POINT IEEE TRANSACTIONS ON PLASMA SCIENCE, 17 :524-533 >DOI >Link

ZHANG JF, WATKINSON P, TAYLOR S, ECCLESTON W. 1989. INTERFACE STATE BEHAVIOR OF PLASMA GROWN OXIDES FOLLOWING LOW-TEMPERATURE ANNEALING APPLIED SURFACE SCIENCE, 39 :374-380 >DOI >Link

HALL S, ZHANG JF, TAYLOR S, ECCLESTON W, BEAHAN P, TATLOCK GT, GIBBINGS CJ, SMITH C, TUPPEN C. 1989. ASSESSMENT OF PLASMA-GROWN OXIDES ON SI-GE SUBSTRATES APPLIED SURFACE SCIENCE, 39 :57-64 >DOI >Link

ZHANG JF, FANG MTC. 1988. A COMPARATIVE-STUDY OF SF6 AND N-2 ARCS IN ACCELERATING FLOW JOURNAL OF PHYSICS D-APPLIED PHYSICS, 21 :730-736 >DOI >Link

GOSWAMI R, BUTCHER JB, GINIGE R, ZHANG JF, TAYLOR S, ECCLESTON W. 1988. LOW-TEMPERATURE GATE DIELECTRICS FORMED BY PLASMA ANODIZATION OF SILICON-NITRIDE ELECTRONICS LETTERS, 24 :1269-1270 >DOI >Link

ZHANG JF, FANG MTC, NEWLAND DB. 1987. THEORETICAL INVESTIGATION OF A 2 KA DC NITROGEN ARC IN A SUPERSONIC NOZZLE JOURNAL OF PHYSICS D-APPLIED PHYSICS, 20 :368-379 >DOI >Link

ZHANG JF, NEWLAND DB, FANG MTC. 1987. THE COMPUTATION OF SELF-SIMILAR ARCS COMPUTER PHYSICS COMMUNICATIONS, 47 :267-280 >DOI >Link

FANG MTC, ZHANG JF. 1986. THE DYNAMIC BEHAVIOR OF NOZZLE ARCS IEEE TRANSACTIONS ON PLASMA SCIENCE, 14 :350-356 >DOI >Link

Conference publication

Ji Z, Gao R, Zhang JF. 2018. Predictive As-Grown-Generation Model for Nbti of Advanced Cmos Devices and Circuits Proceedngs of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018), 2018 China Semiconductor Technology International Conference (CSTIC)

Zhang JF, Duan M, Ji Z, Zhang W. 2018. Assessing the Accuracy of Statistical Properties Extracted from a Limited Number of Device Under Test for Time Dependent Variations Proceeding of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018), 2018 China Semiconductor Technology International Conference (CSTIC)

Zhang JF, Duan M, Ji Z, Zhang W. 2017. Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage Qin YJ, Hong ZL, Tang TA. 2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 12th IEEE International Conference on ASIC (ASICON) :670-673 >Link

Zhang JF, Duan M, Ji Z, Zhang W. 2017. Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage Proceeding of IEEE 12th International Conference on ASIC, IEEE 12th International Conference on ASIC :694-697

Zhang JF, Ji Z, Zhang W. 2017. The As-grown-Generation (AG) model: A reliable model for reliability prediction under real use conditions IEEE 24th International Symposium on The Physical and Failure Analysis of Integrated Circuits

Duan M, Zhang JF, Zhang JC, Zhang W, Ji Z, Benbakhti B, Zhang XF, Hao Y, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G, Asenov A. 2017. Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction IEEE International Reliability Physics Symposium Proceedings, IEEE International Reliability Physics Symposium (IRPS) :XT-5.1-XT-5.7 >DOI

Zhang JF, Ma J, Zhang W, Ji Z. 2017. DEFECTS AND LIFETIME PREDICTION FOR GE PMOSFETS UNDER AC NBTI STRESSES China Semiconductor Technology International Conference (CSTIC) >DOI

Zhang W, Chai Z, Ma J, Zhang J, Ji Z. 2016. Analysis of RTN signals in Resistive-Switching RAM device and its correlation with device operations 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Zhang JF, Duan M, Ji Z, Zhang W. 2016. Hot carrier aging of nano-meter devices 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), >DOI

Gao R, ji Z, Hatta SM, Zhang JF, Franco J, Kaczer B, Zhang W, Duan M, De Gendt S, Linten D, Groeseneken G, Bi J, Liu M. 2016. Predictive As-grown-Generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes Technical Digest - International Electron Devices Meeting, 2016 IEEE International Electron Device Meeting (IEDM)

Ma J, Chai Z, Zhang W, Govoneanu B, Zhang J, Ji Z, Benbakhti B, Groeseneken G, Jurczak M. 2016. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement Technical Digest - International Electron Devices Meeting, IEEE International Electron Devices Meeting :564-567 >DOI

Zhang JF, Duan M, Ji Z, Zhang W. 2016. DEFECTS FOR RANDOM TELEGRAPH NOISE AND NEGATIVE BIAS TEMPERATURE INSTABILITY China Semiconductor Technology International Conference

Chai Z, Ma J, Zhang W, Govoreanu B, Simoen E, Zhang J, JI Z, Gao R, Groeseneken G, Jurczak M. 2016. RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism Digest of Technical Papers - Symposium on VLSI Technology, IEEE 2016 Symposia on VLSI Technology and Circuits >DOI

Ji Z, Gao R, Zhang J, Zhang W, Duan M, Ren P, Arimura H, Wang R, Franco R. 2016. Understanding charge traps for optimizing Si-passivated Ge nMOSFETs Symposia on VLSI Technology and Circuits

Duan M, Zhang JF, Manut A, Ji Z, Zhang W, Asenov A, Gerrer L, Reid D, Razaidi H, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G. 2015. Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM Technical Digest - International Electron Devices Meeting, IEDM, 2016-February :20.4.1-20.4.4 >DOI

Zhang JF, Duan M, Ji Z, Zhang W. 2015. NBTI prediction and its induced time dependent variation Proceedings of 2015 11th IEEE International Conference on ASIC (ASICON),

Ji Z, Linten D, Boschke R, Hellings G, Chen SH, Alian A, Zhou D, Mols , Ivanov T, Franco J, Kaczer B, Zhang X, Gao R, Zhang JF, Zhang W, Collaert N. 2015. ESD characterization of planar InGaAs devices IEEE International Reliability Physics Symposium (IRPS), IEEE International Reliability Physics Symposium (IRPS) :3F.1.1-3F.1.7

Duan M, Zhang JF, Manut A, Ji Z, Zhang W, Asenov A, Gerrer L, Reid D, Razaidi H, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G. 2015. Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM IEEE International Electron Devices Meeting (IEDM) :547-550

Ji Z, zhang , Lin , Duan , Zhang W, Zhang X, Gao R, Kaczer B, Franco J, Schram T, Horiguchi N, De Gendt S, Groeseneken G. 2015. A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias 2015 Symposia on VLSI Technology and Circuits >DOI

Ma J, Zhang W, Zhang JF, JI Z, Benbakhti B, Franco J, Mitard J, Witters L, Collaert N, Groeseneken G. 2015. AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction 2015 Symposia on VLSI Technology and Circuits :T35-T34 >DOI

Hatta SWM, Ji Z, Zhang JF, Zhang WD, Soin N, Kaczer B, Gendt SD, Groeseneken G. 2014. Energy distribution of positive charges in high-k dielectric Microelectronics Reliability, 54 :2329-2333 >DOI

Tang BJ, Zhang WD, Breuil L, Robinson C, Wang YQ, Toledano-Luque M, Van Den Bosch G, Zhang JF, Van Houdt J. 2014. Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations Microelectronics Reliability, 54 :2258-2261 >DOI

Ren P, Wang R, Ji Z, Hao P, Jiang X, Guo X, Luo M, Duan M, Zhang J, Wang J, Liu J, Bu W, Wong W, Yu S, Wu H, Lee W, Xu N, Huang R. 2014. New Insights into the Design for End-of-life Variability of NBTI in Scaled High-κ/Metal-gate Technology for the nano-Reliability Era IEEE International Electron Devices Meeting (IEDM) :816-819

Ji Z, Zhang JF, Zhang W, Zhang X. 2014. A single device based Voltage Step Stress (VSS) Technique for fast reliability screening

Ma J, Zhang W, ZHang J, Benbakhti B, Ji Z, Mitard J, Franco J, Kaczer B, Groeseneken G. 2014. NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction 2014 IEEE International Electron Devices Meeting :34.2.1-34.2.4 >DOI

Duan M, Zhang JF, Ji Z, Zhang W, Kaczer B, Schram T, Ritzenthaler R, Thean G, Groseneken G, Asenov A. 2014. Time-dependent variation: A new defect-based prediction methodology IEEE 2014 Symposia on VLSI Technology and Circuits :74-75 >DOI

Wang Z, Dissanayake G. 2012. Exploiting Vehicle Motion Information in Monocular SLAM 2012 12TH INTERNATIONAL CONFERENCE ON CONTROL, AUTOMATION, ROBOTICS & VISION (ICARCV), 12th International Conference on Control, Automation, Robotics and Vision (ICARCV) :1030-1035 >Link

Lin L, Ji Z, Zhang JF, Zhang WD. 2011. Development of a Fast Technique for Characterizing Interface States SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 35 :81-93 >DOI >Link

Tang BJ, Zhang WD, Zhang JF, Van den Bosch G, Govoreanu B, Van Houdt J, IEEE . 2011. Abnormal V-TH/V-FB shift caused by as-grown mobile charges in Al2O3 and its impacts on Flash memory cell operations 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), >Link

Hatta SFWM, Soin N, Abd Hadi D, Zhang JF. 2010. NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process variations MICROELECTRONICS RELIABILITY, 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 50 :1283-1289 >DOI >Link

Zheng XF, Zhang WD, Govoreanu B, Zhang JF, Van Houdt J. 2009. A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for flash memory application Technical Digest - International Electron Devices Meeting, IEDM, >DOI

Zheng XFN, Zhang WD, Govoreanu B, Zhang JF, van Houdt J. 2009. A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory application 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEEE International Electron Devices Meeting (IEDM 2009) :127-+ >Link

Ji Z, Lin L, Zhang JF. 2009. Impact of sensing gate bias on NBTI of Hf-based dielectric stacks Sah RE, Deen JM, Toriumi A, Zhang J, Yota J. SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 10, Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics held at the 215th ECS Meeting 19 :351-362 >DOI >Link

Zhang JF. 2009. Defects and instabilities in Hf-dielectric/SiON stacks (Invited Paper) MICROELECTRONIC ENGINEERING, 16th Biennial Conference on Insulating Films on Semiconductors 86 :1883-1887 >DOI >Link

Zheng XF, Zhang WD, Govoreanu B, Zhang JF, Van Houdt J. 2009. Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells MICROELECTRONIC ENGINEERING, 16th Biennial Conference on Insulating Films on Semiconductors 86 :1834-1837 >DOI >Link

Wang Y, Zhang JF, Chang MH, Xu M, Tan C. 2008. Characteristics of As-grown Hole Trapping in Silicon Oxynitride p-MOSFETs Subjected to Negative Bias Temperature Stress Yu M, An X. 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 9th International Conference on Solid-State and Integrated-Circuit Technology :632-+ >DOI >Link

Zhang JF, Chang MH, Ji Z, Zhang WD. 2008. Recent progress in understanding the instability and defects in gate dielectrics Yu M, An X. 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 9th International Conference on Solid-State and Integrated-Circuit Technology :608-611 >DOI >Link

Chang MH, Wang Y, Zhang JF, Zhao CZ, Zhang WD, Xu M. 2007. Contribution of as-grown hole traps to NBTI ECS Transactions, 6 :245-262 >DOI

Zhang JF, Zhao CZ, Chang MH, Zhang W, Groeseneken G, Pantisano L, De Gendt S, Heyns M. 2007. Instability and defects in gate dielectric: Similarity and differences between Hf-stacks and SiO2 ECS Transactions, 11 :219-233 >DOI

Zheng XF, Zhang WD, Zhang JF, Chang MH, Hao Y. 2007. Non-uniform distribution of electron traps generated by fowler-nordheim stress in silicon dioxides ECS Transactions, 6 :329-341 >DOI

Zhang JF, Ji Z, Chang MH, Kaczer B, Groeseneken G. 2007. Real Vth instability of pMOSFETs under practical operation conditions 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, IEEE International Electron Devices Meeting :817-+ >DOI >Link

Lu Y, Hall S, Buiu O, Zhang JF. 2007. Real-time observation of charging dynamics in hafnium silicate films using MOS capacitance transients MICROELECTRONIC ENGINEERING, 15th Biennial Conference on Insulating Films on Semiconductors 84 :2390-2393 >DOI >Link

Zhao CZ, Zhang JF, Zahid MB, Efthymiou E, Lu Y, Hall S, Peaker AR, Groeseneken G, Pantisano L, Degraeve R, De Gendt S, Heyns M. 2007. Hydrogen induced positive charge in Hf-based dielectrics MICROELECTRONIC ENGINEERING, 15th Biennial Conference on Insulating Films on Semiconductors 84 :2354-2357 >DOI >Link

Efthymiou E, Bernardini S, Volkos SN, Hamilton B, Zhang JF, Uppal HJ, Peaker AR. 2007. Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks MICROELECTRONIC ENGINEERING, 15th Biennial Conference on Insulating Films on Semiconductors 84 :2290-2293 >DOI >Link

Zahid MB, Degraeve R, Zhang JF, Groeseneken G. 2007. Impact of process conditions on interface and high-kappa trap density studied by variable T-charge-T-discharge charge pumping ((VTCP)-C-2) MICROELECTRONIC ENGINEERING, 15th Biennial Conference on Insulating Films on Semiconductors 84 :1951-1955 >DOI >Link

Zahid MB, Degraeve R, Pantisano L, Zhang JF, Groeseneken G. 2007. Defects generation in SiO2/HfO2 studied with variable T-charge-T-discharge charge pumping ((VTCP)-C-2). 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 45th Annual IEEE International Reliability Physics Symposium :55-+ >DOI >Link

Zhao CZ, Zahid MB, Zhang JF, Groeseneken G, Degraeve R, De Gendt S. 2005. Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks MICROELECTRONIC ENGINEERING, 14th Biennial Conference on Insulating Films on Semiconductors 80 :366-369 >DOI >Link

Zhang JF, Zhao CZ. 2004. A review of positive charge formation in gate oxides Huang R, Yu M, Liou JJ, Hiramoto T, Claeys C. 2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 7th International Conference on Solid-State and Integrated Circuits Technology :781-786 >Link

Zhang JF, Zhao CZ, Sii HK, Groeseneken G, Degraeve R, Ellis JN, Beech CD. 2002. Relation between hole traps and hydrogenous species in silicon dioxides SOLID-STATE ELECTRONICS, 12th Biennial Conference on Insulating Films on Semiconductors 46 :1839-1847 >DOI >Link

Zhang JF, Zhao CZ, Groeseneken G, Degraeve R, Ellis JN, Beech CD. 2001. Relation between hole traps and non-reactive hydrogen-induced positive charges MICROELECTRONIC ENGINEERING, 12th Biennial Conference on Insulating Films on Semiconductors 59 :67-72 >DOI >Link

Zhang JF, Sii HK, Groeseneken G, Degraeve R. 2001. Generation of hole traps in silicon dioxides Tan W, Pey KL, Chim WK, Thong J. PROCEEDINGS OF THE 2001 8TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001) :50-54 >DOI >Link

Zhao CZ, Zhang JF, Groeseneken G, Degraeve R, Ellis JN, Beech CD. 2000. Hydrogen induced and plasma charging enhanced positive charge generation in gate oxides Koyanagi M, Egelhardt M, Gabriel CT. 2000 5TH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 5th International Symposium on Plasma Process-Induced Damage (P2ID) :129-132 >DOI >Link

Sii HK, Zhang JF, Degraeve R, Groeseneken G. 1999. Relation between hydrogen and the generation of interface state precursors MICROELECTRONIC ENGINEERING, 11th Biennial Conference on Insulating Films on Semiconductors 48 :135-138 >DOI >Link

AlKofahi IS, Zhang JF, Groeseneken G. 1997. Generation and annealing of hot hole induced interface states MICROELECTRONIC ENGINEERING, 10th Biennial Conference on Insulating Films on Semiconductors (INFOS 97) 36 :227-230 >DOI >Link

Alkofahi IS, Zhang JF, Groeseneken G. 1996. On the hot hole induced post-stress interface trap generation in MOSFET's 1996 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 34TH ANNUAL, IEEE 34th Annual International Reliability Physics Symposium :305-310 >Link

Al-kofahi IS, Zhang JF, Groeseneken G. 1996. The enhanced degradation of MOSFETs damaged by hot holes Massoud HZ, Poindexter EH, Helms CR. PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996, 3rd International Symposium on the Physics and Chemistry of SiO(2) and the Si-SiO(2) Interface. at the Spring Meeting of the Electrochemical-Society 96 :711-721 >Link

GOH IS, ZHANG JF, HALL S, ECCLESTON W, WERNER K. 1995. PLASMA OXIDATION OF SI AND SIGE MICROELECTRONIC ENGINEERING, 9th Biennial Conference on Insulating Films on Semiconductors (INFOS 95) 28 :221-224 >DOI >Link

Brown J, Gao R, Ji Z, Chen J, Wu J, Zhang J, Zhou B, Shi Q, Crawford J, Zhang W. A low-power and high-speed True Random Number Generator using generated RTN 2018 Symposia on VLSI Technology and Circuits >Link

Chapters

Grasser T. 2013. Bias Temperature Instability for Devices and Circuits Springer Science & Business Media 9781461479093

Engagement & Impact

Fellowships:

Fellow of The Higher Education Academy, The Higher Education Academy