Liverpool Skyline

Department of Electronics and Electrical Engineering

Mr Rui Gao

Publications

Journal Articles

Gao R, Ji Z, Manut AB, Zhang JF, Franco J, Hatta SWM, Zhang WD, Kaczer B, Linten D, Groeseneken G. 2017. NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 :4011-4017 >DOI >Link

Gao R, Manut AB, Ji Z, Ma J, Duan M, Zhang JF, Franco J, Hatta SWM, Zhang WD, Kaczer B, Vigar D, Linten D, Groeseneken G. 2017. Reliable Time Exponents for Long Term Prediction of Negative Bias Temperature Instability by Extrapolation IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 :1467-1473 >DOI >Link

Ji Z, Zhang X, Franco J, Gao R, Duan M, Zhang JF, Zhang WD, Kaczer B, Alian A, Linten D, Zhou D, Collaert N, De Gendt S, Groeseneken G. 2015. An Investigation on Border Traps in III-V MOSFETs With an In0.53Ga0.47As Channel IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 :3633-3639 >DOI >Link

Gao R, Ji Z, Zhang JF, Zhang WD, Hatta SFWM, Niblock J, Bachmayr P, Stauffer L, Wright K, Greer S. 2015. A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 :221-226 >DOI >Link

Conference Publication (journal proceedings)

Gao R, Ji Z, Hatta SM, Zhang JF, Franco J, Kaczer B, Zhang W, Duan M, De Gendt S, Linten D, Groeseneken G, Bi J, Liu M. 2016. Predictive As-grown-Generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 62nd Annual IEEE International Electron Devices Meeting (IEDM) >Link

Ren P, Gao R, Ji Z, Arimura H, Zhang JF, Wang R, Duan M, Zhang W, Franco J, Sioncke S, Cott D, Mitard J, Witters L, Mertens H, Kaczer B, Mocuta A, Collaert N, Linten D, Huang R, Thean AV-Y, Groeseneken G. 2016. Understanding charge traps for optimizing Si-passivated Ge nMOSFETs 2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 36th IEEE Symposium on VLSI Technology >Link

Chai Z, Ma J, Zhang W, Govoreanu B, Simoen E, Zhang JF, Ji Z, Gao R, Groeseneken G, Jurczak M. 2016. RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism 2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 36th IEEE Symposium on VLSI Technology >Link

Ji Z, Linten D, Boschke R, Hellings G, Chen SH, Alian A, Zhou D, Mols Y, Ivanov T, Franco J, Kaczer B, Zhang X, Gao R, Zhang JF, Zhang W, Collaert N, Groeseneken G. 2015. ESD Characterization of planar InGaAs devices 2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), IEEE International Reliability Physics Symposium (IRPS) >Link

Ji Z, Zhang JF, Lin L, Duan M, Zhang W, Zhang X, Gao R, Kaczer B, Franco J, Schram T, Horiguchi N, De Gendt S, Groeseneken G. 2015. A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias 2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY), 35th Anniversary of the Symposium on VLSI Technology (VLSI Technology) >Link