Liverpool Skyline

Department of Electronics and Electrical Engineering

Mr Rui Gao

Publications

Conference publication

Ji Z, Gao R, Zhang JF. 2018. Predictive As-Grown-Generation Model for Nbti of Advanced Cmos Devices and Circuits Proceedngs of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018), 2018 China Semiconductor Technology International Conference (CSTIC)

Gao R, ji Z, Hatta SM, Zhang JF, Franco J, Kaczer B, Zhang W, Duan M, De Gendt S, Linten D, Groeseneken G, Bi J, Liu M. 2016. Predictive As-grown-Generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes Technical Digest - International Electron Devices Meeting, 2016 IEEE International Electron Device Meeting (IEDM)

Ji Z, Gao R, Zhang J, Zhang W, Duan M, Ren P, Arimura H, Wang R, Franco R. 2016. Understanding charge traps for optimizing Si-passivated Ge nMOSFETs Symposia on VLSI Technology and Circuits

Chai Z, Ma J, Zhang W, Govoreanu B, Simoen E, Zhang J, JI Z, Gao R, Groeseneken G, Jurczak M. 2016. RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism Digest of Technical Papers - Symposium on VLSI Technology, IEEE 2016 Symposia on VLSI Technology and Circuits >DOI

Ji Z, Linten D, Boschke R, Hellings G, Chen SH, Alian A, Zhou D, Mols , Ivanov T, Franco J, Kaczer B, Zhang X, Gao R, Zhang JF, Zhang W, Collaert N. 2015. ESD characterization of planar InGaAs devices IEEE International Reliability Physics Symposium (IRPS), IEEE International Reliability Physics Symposium (IRPS) :3F.1.1-3F.1.7

Ji Z, zhang , Lin , Duan , Zhang W, Zhang X, Gao R, Kaczer B, Franco J, Schram T, Horiguchi N, De Gendt S, Groeseneken G. 2015. A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias 2015 Symposia on VLSI Technology and Circuits >DOI

Brown J, Gao R, Ji Z, Chen J, Wu J, Zhang J, Zhou B, Shi Q, Crawford J, Zhang W. A low-power and high-speed True Random Number Generator using generated RTN 2018 Symposia on VLSI Technology and Circuits >Link

Journal article

Gao R, Ji Z, Manut A, zhang JF, Franco J, Hatta SWM, Zhang W, Kaczer B, Linten D, Groeseneken G. 2017. NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling IEEE Transactions on Electron Devices, 64 :4011-4017 >DOI

Gao R, Manut A, Ji Z, Ma J, Duan M, Zhang J, Franco J, Hatta S, Zhang W, Kaczer B, Vigar D, Linten D, Groeseneken G. 2017. Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation IEEE Transactions on Electron Devices, 64 :1467-1473 >DOI

Ji Z, zhang JF, zhang W, gao R, zhang X. 2015. An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel IEEE Transactions on Electron Devices, :3633-3639 >DOI

Gao R, Ji Z, Zhang JF, Zhang WD, Hatta SFWM, Niblock J, Bachmayr P, Stauffer L, Wright K, Greer S. 2015. A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 :221-226 >DOI >Link