Liverpool Skyline

Department of Electronics and Electrical Engineering

Prof Wei Zhang

Prof Wei Zhang

Telephone: 0151 231 2868

Biography

● Professor of Nanoelectronics
● Leader of the research of memory devices at LJMU, including both RRAM and Flash memory
● Leader of the collaboration with the world-leading IMEC Memory Device Consortium, including Intel, Micron, Samsung, Hynix, Toshiba and SanDisk
● Principal investigator and co-investigator of a number of research projects with a total value of more than £3 million, including:
• Five EPSRC research grants on RRAM, Ge MOSFETs, Variability, and SILC
• Three official collaboration agreements with IMEC on RRAM and 3D Flash memory
• One HEFCE Promosing Researcher Grant
● 100% research outputs are rated as international excellence in Research Excellence Framework (REF) 2014, with one highly rated Impact Case Study
● Published over one hundred papers predominantly in benchmarking journals for REF and flagship international conferences such as IEEE Transactions, IEDM, VLSI and IRPS
● Supervisor of eleven PhD students (four as the Director of Studies)

Degrees

Liverpool John Moores University, United Kingdom, PhD

Academic appointments

Professor of Nanoelectronics, Department of Electronics and Electrical Engineering, Liverpool John Moores University, 2014 - present

Publications

Highlighted publications

Chai Z, Freitas P, Zhang W, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS. 2018. Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network IEEE Electron Device Letters, >DOI

Chai Z, Zhang W, Freitas P, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS, Hall S, Chalker P, Robertson J. 2018. The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique IEEE Electron Device Letters, >DOI

Ma J, Chai Z, Zhang W, Zhang J, Ji Z, Benbakhti B, Govoreanu B, Simoen E, Goux L, Belmonte A, Degraeve R, Kar G, Jurczak M. 2018. Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution IEEE Transactions on Electron Devices, 65 :970-977 >DOI

Chai Z, Ma J, Zhang WD, Govoreanu B, Zhang JF, Ji Z, Jurczak M. 2017. Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals IEEE Transactions on Electron Devices, :1-7 >DOI

Ma J, Chai Z, Zhang W, Govoneanu B, Zhang J, Ji Z, Benbakhti B, Groeseneken G, Jurczak M. 2016. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement Technical Digest - International Electron Devices Meeting, IEEE International Electron Devices Meeting :564-567 >DOI

Chai Z, Ma J, Zhang W, Govoreanu B, Simoen E, Zhang J, JI Z, Gao R, Groeseneken G, Jurczak M. 2016. RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism Digest of Technical Papers - Symposium on VLSI Technology, IEEE 2016 Symposia on VLSI Technology and Circuits >DOI

Journal article

Lanza M, Wong HSP, Pop E, Ielmini D, Strukov D, Regan BC, Larcher L, Villena MA, Yang JJ, Goux L, Belmonte A, Yang Y, Puglisi FM, Kang J, Magyari-Köpe B, Yalon E, Kenyon A, Buckwell M, Mehonic A, Shluger A, Li H, Hou TH, Hudec B, Akinwande D, Ge R, Ambrogio S, Roldan JB, Miranda E, Suñe J, Pey KL, Wu X, Raghavan N, Wu E, Lu WD, Navarro G, Zhang W, Wu H, Li R, Holleitner A, Wurstbauer U, Lemme MC, Liu M, Long S, Liu Q, Lv H, Padovani A, Pavan P, Valov I, Jing X, Han T, Zhu K, Chen S, Hui F, Shi Y. 2018. Recommended Methods to Study Resistive Switching Devices Advanced Electronic Materials, >DOI

Chai Z, Freitas P, Zhang W, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS. 2018. Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network IEEE Electron Device Letters, >DOI

Duffy STEVEN, Benbakhti B, Kalna K, Boucherta M, Zhang W, Bourzgui N, Soltani A. 2018. Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs IEEE Access, 6 :42721-42728 >DOI

Gao R, Ji Z, Zhang JF, Marsland J, Zhang W. 2018. As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI) IEEE Transactions on Electron Devices, 65 :3662-3668 >DOI

Chai Z, Zhang W, Freitas P, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS, Hall S, Chalker P, Robertson J. 2018. The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique IEEE Electron Device Letters, >DOI

Ma J, Chai Z, Zhang W, Zhang J, Ji Z, Benbakhti B, Govoreanu B, Simoen E, Goux L, Belmonte A, Degraeve R, Kar G, Jurczak M. 2018. Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution IEEE Transactions on Electron Devices, 65 :970-977 >DOI

Zhang JF, Ji Z, Zhang W. 2018. As-grown-Generation (AG) Model of NBTI: a shift from fitting test data to prediction Microelectronics Reliability, 80 :109-123 >DOI

Duffy SJ, Benbakhti B, Mattalah M, Zhang W, Bouchilaoun M, Boucherta M, Kalna K, Bourzgui N, Maher H, Soltani A. 2017. Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate ECS Journal of Solid State Science and Technology, 6 :S3040-S3043 >DOI

Ahmeda K, Ubochi B, Benbakhti B, Duffy SJ, Soltani A, Zhang W, Kalna K. 2017. Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures IEEE Access, 6 :20946-20952 >DOI

Sedghi N, Li H, Brunell IF, Dawson K, Guo Y, Potter RJ, Gibbon JT, Dhanak VR, Zhang WD, Zhang JF, Hall S, Robertson J, Chalker PR. 2017. Enhanced switching stability in Ta 2 O 5 resistive RAM by fluorine doping Applied Physics Letters, 111 :092904-092904 >DOI

Chai Z, Ma J, Zhang WD, Govoreanu B, Zhang JF, Ji Z, Jurczak M. 2017. Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals IEEE Transactions on Electron Devices, :1-7 >DOI

Gao R, Ji Z, Manut A, zhang JF, Franco J, Hatta SWM, Zhang W, Kaczer B, Linten D, Groeseneken G. 2017. NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling IEEE Transactions on Electron Devices, 64 :4011-4017 >DOI

Duan M, Zhang JF, Ji Z, Zhang W, Kaczer B, Asenov A. 2017. Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs IEEE Transactions on Electron Devices, 64 :2478-2484

Sedghi N, Li H, Brunell IF, Dawson K, Potter RJ, Guo Y, Gibbon JT, Dhanak VR, Zhang W, Zhang JF, Robertson J, Hall S, Chalker PR. 2017. The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM Applied Physics Letters, 110 >DOI

Gao R, Manut A, Ji Z, Ma J, Duan M, Zhang J, Franco J, Hatta S, Zhang W, Kaczer B, Vigar D, Linten D, Groeseneken G. 2017. Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation IEEE Transactions on Electron Devices, 64 :1467-1473 >DOI

Ma J, Zhang W, Zhang JF, Benbakhti B, Ji Z, Mitard J, Arimura H. 2016. A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, :3830-3836 >DOI

Duan M, Zhang JF, Ji Z, Zhang W, Vigar D, Asenov A, Gerrer L, Chandra V, Aitken R, Kaczer B. 2016. Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging IEEE TRANSACTIONS ON ELECTRON DEVICES, :3642-3648 >DOI

Manut A, Zhang JF, duan , ji , zhang W, kaczer B, Schram T, Horiguchi, N, Groeseneken G. 2015. Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation IEEE Journal of Electron Devices Society, :15-21 >DOI

Ji Z, zhang JF, zhang W, gao R, zhang X. 2015. An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel IEEE Transactions on Electron Devices, :3633-3639 >DOI

Gao R, Ji Z, Zhang JF, Zhang WD, Hatta SFWM, Niblock J, Bachmayr P, Stauffer L, Wright K, Greer S. 2015. A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 :221-226 >DOI >Link

Ren P, Wang R, Ji Z, Hao P, Jiang X, Guo S, Luo M, Duan M, Zhang JF, Wang J, Liu J, Bu W, Wu J, Wong W, Yu S, Wu H, Lee S-W, Xu N, Huang R. 2014. New Insights into the Design for End-of-life Variability of NBTI in Scaled High-kappa/Metal-gate Technology for the nano-Reliability Era 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), >Link

Robinson C, Zhang WD, Tang B, Zheng XF, Zhang JF. 2014. Instabilities induced by electron trapping/detrapping in high-k gate dielectrics of Flash memories: Evaluation and Suppression Tang TA, Zhou J. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), >Link

Zhang JF, Duani M, Ji Z, Zhang W. 2014. TIME-DEPENDENT DEVICE-TO-DEVICE VARIATION ACCOUNTING FOR WITHIN-DEVICE FLUCTUATION (TVF): A NEW CHARACTERIZATION TECHNIQUE Tang TA, Zhou J. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), >Link

Duan M, Zhang JF, Ji Z, Zhang W, Kaczer B, Schram T, Ritzenthaler R, Thean A, Groeseneken G, Asenov A. 2014. Time-dependent variation: A new defect-based prediction methodology 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, >Link

Ji Z, Hatta SWM, Zhang JF, Zhang W, Niblock J, Bachmayr P, Stauffer L, Wright K, Greer S. 2014. A new technique for probing the energy distribution of positive charges in gate dielectric 2014 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), :73-78 >Link

Tang BJ, Zhang WD, Breuil L, Robinson C, Wang YQ, Toledano-Luque M, Van den Bosch G, Zhang JF, Van Houdt J. 2014. Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations MICROELECTRONICS RELIABILITY, 54 :2258-2261 >DOI >Link

Hatta SWM, Ji Z, Zhang JF, Zhang WD, Soin N, Kaczer B, Gendt SD, Groeseneken G. 2014. Energy distribution of positive charges in high-k dielectric MICROELECTRONICS RELIABILITY, 54 :2329-2333 >DOI >Link

Ji Z, Zhang JF, Zhang W, Zhang X, Kaczer B, De Gendt S, Groeseneken G, Ren P, Wang R, Huang R. 2014. A single device based Voltage Step Stress (VSS) Technique for fast reliability screening 2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, >Link

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2014. Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :3081-3089 >DOI >Link

Tang B, Zhang W, Toledano-Luque M, Zhang JF, Degraeve R, Ji Z, Arreghini A, Van den Bosch G, Van Houdt J. 2014. Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :1501-1507 >DOI >Link

Tang B, Zhang WD, Degraeve R, Breuil L, Blomme P, Zhang JF, Ji Z, Zahid M, Toledano-Luque M, Van den Bosch G, Van Houdt J. 2014. Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-kappa Intergate Dielectrics of Flash Memory Cells IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :1299-1306 >DOI >Link

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang WD, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker PR. 2014. Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :1307-1315 >DOI >Link

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2014. Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs IEEE ELECTRON DEVICE LETTERS, 35 :160-162 >DOI >Link

Ji Z, Hatta SFWM, Zhang JF, Ma JG, Zhang W, Soin N, Kaczer B, De Gendt S, Groeseneken G. 2013. Negative Bias Temperature Instability Lifetime Prediction: Problems and Solutions 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), >Link

Duan M, Zhang JF, Ji Z, Ma JG, Zhang W, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2013. Key issues and techniques for characterizing Time-dependent Device-to-Device Variation of SRAM 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), >Link

Duan M, Zhang JF, Ji Z, Zhang W. 2013. Defect losses under different processes, stress, recovery, and anneal conditions Lin Q, Claeys C, Huang D, Wu H, Kuo Y, Huang R, Lai K, Zhang Y, Guo Z, Wang S, Liu R, Jiang T, Song P, Lam C, Xiong J, Chen K. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013), 52 :929-934 >DOI >Link

Ji Z, Gillbert J, Zhang JF, Zhang W. 2013. A new Ultra-Fast Single Pulse technique (UFSP) for channel effective mobility evaluation in MOSFETs IEEE International Conference on Microelectronic Test Structures, :64-69 >DOI

Ma J, Zhang JF, Ji Z, Benbakhti B, Duan M, Zhang W, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2013. Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3structure Microelectronic Engineering, 109 :43-45 >DOI

Tang B, Toledano-Luque M, Zhang WD, Van Den Bosch G, Degraeve R, Zhang JF, Van Houdt J. 2013. Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization Microelectronic Engineering, 109 :39-42 >DOI

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2013. New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation IEEE Transactions on Electron Devices, 60 :2505-2511 >DOI

Tang B, Robinson C, Zhang WD, Zhang JF, Degraeve R, Blomme P, Toledano-Luque M, Van Den Bosch G, Govoreanu B, Van Houdt J. 2013. Read and pass disturbance in the programmed states of floating gate flash memory cells with high-κ interpoly gate dielectric stacks IEEE Transactions on Electron Devices, 60 :2261-2267 >DOI

Hatta SWM, Ji Z, Zhang JF, Duan M, Zhang WD, Soin N, Kaczer B, De Gendt S, Groeseneken G. 2013. Energy Distribution of Positive Charges in Gate Dielectric: Probing Technique and Impacts of Different Defects IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 :1745-1753 >DOI >Link

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2013. New insights into defect loss, slowdown, and device lifetime enhancement IEEE Transactions on Electron Devices, 60 :413-419 >DOI

Zhang JF, Ji Z, Duan M, Zhang W. 2012. Development of new characterisation technique for interface states beyond bandgap ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, >DOI

Zhang WD, Robinson C, Zheng XF, Zhang JF. 2012. Characterisation of electron traps in high-k dielectric stacks for Flash memory applications using fast pulse techniques ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, >DOI

Benbakhti B, Zhang JF, Ji Z, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2012. Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2gate stack IEEE Electron Device Letters, 33 :1681-1683 >DOI

Duan M, Zhang JF, Ji Z, Zhang W, Kaczer B, De Gendt S, Groeseneken G. 2012. Defect Loss: A New Concept for Reliability of MOSFETs IEEE ELECTRON DEVICE LETTERS, 33 :480-482 >DOI >Link

Ji Z, Zhang JF, Zhang W. 2012. A New Mobility Extraction Technique Based on Simultaneous Ultrafast I-d-V-g and C-cg-V-g Measurements in MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :1906-1914 >DOI >Link

Tang B, Zhang WD, Zhang JF, Van den Bosch G, Toledano-Luque M, Govoreanu B, Van Houdt J. 2012. Investigation of Abnormal V-TH/V-FB Shifts Under Operating Conditions in Flash Memory Cells With Al2O3 High-kappa Gate Stacks IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :1870-1877 >DOI >Link

Ji Z, Zhang JF, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2012. Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :783-790 >DOI >Link

Zheng XF, Robinson C, Zhang WD, Zhang JF, Govoreanu B, Van Houdt J. 2011. Electron Trapping in HfAlO High-kappa Stack for Flash Memory Applications: An Origin of V-th Window Closure During Cycling Operations IEEE TRANSACTIONS ON ELECTRON DEVICES, 58 :1344-1351 >DOI >Link

Lin L, Ji Z, Zhang JF, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2011. A Single Pulse Charge Pumping Technique for Fast Measurements of Interface States IEEE TRANSACTIONS ON ELECTRON DEVICES, 58 :1490-1498 >DOI >Link

Zhang JF, Ji Z, Lin L, Zhang W. 2010. Effective threshold voltage shift: A measure for NBTI removing uncertainty in mobility degradation ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, :1600-1603 >DOI

Zheng XF, Zhang WD, Govoreanu B, Zhang JF, van Houdt J. 2010. A New Multipulse Technique for Probing Electron Trap Energy Distribution in High-kappa Materials for Flash Memory Application IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :2484-2492 >DOI >Link

Aguado DR, Govoreanu B, Zhang WD, Jurczak M, De Meyer K, Van Houdt J. 2010. A Novel Trapping/Detrapping Model for Defect Profiling in High-k Materials Using the Two-Pulse Capacitance-Voltage Technique IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :2726-2735 >DOI >Link

Zheng XF, Zhang WD, Govoreanu B, Aguado DR, Zhang JF, Van Houdt J. 2010. Energy and Spatial Distributions of Electron Traps Throughout SiO2/Al2O3 Stacks as the IPD in Flash Memory Application IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :288-296 >DOI >Link

Ji Z, Zhang JF, Zhang W, Groeseneken G, Pantisano L, De Gendt S, Heyns MM. 2009. An assessment of the mobility degradation induced by remote charge scattering APPLIED PHYSICS LETTERS, 95 >DOI >Link

Zhang WD, Govoreanu B, Zheng XF, Aguado DR, Rosmeulen M, Blomme P, Zhang JF, Van Houdt J. 2008. Two-pulse C-V: A new method for characterizing electron traps in the bulk of SiO2/high-k dielectric stacks IEEE ELECTRON DEVICE LETTERS, 29 :1043-1046 >DOI >Link

Zhang WD, Zhang JF, Zhao CZ, Chang MH, Groeseneken G, Degraeve R. 2006. Electrical signature of the defect associated with gate oxide breakdown IEEE ELECTRON DEVICE LETTERS, 27 :393-395 >DOI >Link

Chang MH, Zhang JF, Zhang WD. 2006. Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides IEEE TRANSACTIONS ON ELECTRON DEVICES, 53 :1347-1354 >DOI >Link

Ma XH, Hao Y, Sun BG, Gao HX, Ren HX, Zhang JC, Zhang JF, Zhang XJ, Zhang WD. 2006. Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process CHINESE PHYSICS, 15 :195-198 >Link

Zhang WD, Zhang JF, Lalor MJ, Burton DR, Groeseneken G, Degraeve R. 2003. Effects of detrapping on electron traps generated in gate oxides SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 18 :174-182 >DOI >Link

Zhang WD, Zhang JF, Lalor M, Burton D, Groeseneken GV, Degraeve R. 2002. Two types of neutral electron traps generated in the gate silicon dioxide IEEE TRANSACTIONS ON ELECTRON DEVICES, 49 :1868-1875 >DOI >Link

Zhang WD, Zhang JF, Lalor M, Burton D, Groeseneken G, Degraeve R. 2001. On the mechanism of electron trap generation in gate oxides MICROELECTRONIC ENGINEERING, 59 :89-94 >DOI >Link

Zhang WD, Zhang JF, Uren MJ, Groeseneken G, Degraeve R, Lalor M, Burton D. 2001. Dependence of energy distributions of interface states on stress conditions MICROELECTRONIC ENGINEERING, 59 :95-99 >DOI >Link

Zhang WD, Zhang JF, Uren MJ, Groeseneken G, Degraeve R, Lalor M, Burton D. 2001. On the interface states generated under different stress conditions APPLIED PHYSICS LETTERS, 79 :3092-3094 >DOI >Link

Hao Y, Zhu JG, Ren HX, Zhang WD. 2001. The gate-oxide breakdown effect coupled by channel hot-carrier-effect in SOI MOSFET's CHINESE JOURNAL OF ELECTRONICS, 10 :204-209 >Link

Conference publication

Zhang JF, Duan M, Ji Z, Zhang W. 2018. Assessing the Accuracy of Statistical Properties Extracted from a Limited Number of Device Under Test for Time Dependent Variations Proceeding of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018), 2018 China Semiconductor Technology International Conference (CSTIC)

Zhang JF, Duan M, Ji Z, Zhang W. 2017. Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage Qin YJ, Hong ZL, Tang TA. 2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 12th IEEE International Conference on ASIC (ASICON) :670-673 >Link

Duffy SJ, Gerbedoen JC, Mattalah M, Benbakhti B, Zhang W, Boucherta M, Kalna K, Maher H, Soltani A. 2017. Low Ohmic Contact Resistance for AlGaN/GaN HEMTs with high Al Concentration & Si-HP [111] Substrate UK Semiconductors :149-149

Zhang JF, Duan M, Ji Z, Zhang W. 2017. Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage Proceeding of IEEE 12th International Conference on ASIC, IEEE 12th International Conference on ASIC :694-697

Zhang JF, Ji Z, Zhang W. 2017. The As-grown-Generation (AG) model: A reliable model for reliability prediction under real use conditions IEEE 24th International Symposium on The Physical and Failure Analysis of Integrated Circuits

Zhang JF, Ma J, Zhang W, Ji Z. 2017. DEFECTS AND LIFETIME PREDICTION FOR GE PMOSFETS UNDER AC NBTI STRESSES China Semiconductor Technology International Conference (CSTIC) >DOI

Duan M, Zhang JF, Zhang JC, Zhang W, Ji Z, Benbakhti B, Zhang XF, Hao Y, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G, Asenov A. 2017. Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction IEEE International Reliability Physics Symposium Proceedings, IEEE International Reliability Physics Symposium (IRPS) :XT-5.1-XT-5.7 >DOI

Ahmeda K, Ubochi B, Kalna K, Benbakhti B, Duffy SJ, Zhang W, Soltani A. 2017. Self-Heating and Polarization Effects in AlGaN/AlN/GaN/AlGaN Based Devices European Microwave Association (EuMA), European Microwave Integrated Circuits (EuMIC) :37-40

Claeys C, de Andrade MGC, Chai Z, Fang W, Govoreanu B, Kaczer B, Zhang W, Simoen E. 2016. Random Telegraph Signal Noise in Advanced High Performance and Memory Devices 2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 31st Symposium on Microelectronics Technology and Devices (SBMicro) >Link

Zhang W, Chai Z, Ma J, Zhang J, Ji Z. 2016. Analysis of RTN signals in Resistive-Switching RAM device and its correlation with device operations 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Zhang JF, Duan M, Ji Z, Zhang W. 2016. Hot carrier aging of nano-meter devices 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), >DOI

Gao R, ji Z, Hatta SM, Zhang JF, Franco J, Kaczer B, Zhang W, Duan M, De Gendt S, Linten D, Groeseneken G, Bi J, Liu M. 2016. Predictive As-grown-Generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes Technical Digest - International Electron Devices Meeting, 2016 IEEE International Electron Device Meeting (IEDM)

Ma J, Chai Z, Zhang W, Govoneanu B, Zhang J, Ji Z, Benbakhti B, Groeseneken G, Jurczak M. 2016. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement Technical Digest - International Electron Devices Meeting, IEEE International Electron Devices Meeting :564-567 >DOI

Zhang JF, Duan M, Ji Z, Zhang W. 2016. DEFECTS FOR RANDOM TELEGRAPH NOISE AND NEGATIVE BIAS TEMPERATURE INSTABILITY China Semiconductor Technology International Conference

Ji Z, Gao R, Zhang J, Zhang W, Duan M, Ren P, Arimura H, Wang R, Franco R. 2016. Understanding charge traps for optimizing Si-passivated Ge nMOSFETs Symposia on VLSI Technology and Circuits

Chai Z, Ma J, Zhang W, Govoreanu B, Simoen E, Zhang J, JI Z, Gao R, Groeseneken G, Jurczak M. 2016. RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism Digest of Technical Papers - Symposium on VLSI Technology, IEEE 2016 Symposia on VLSI Technology and Circuits >DOI

Duan M, Zhang JF, Manut A, Ji Z, Zhang W, Asenov A, Gerrer L, Reid D, Razaidi H, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G. 2015. Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM Technical Digest - International Electron Devices Meeting, IEDM, 2016-February :20.4.1-20.4.4 >DOI

Zhang JF, Duan M, Ji Z, Zhang W. 2015. NBTI prediction and its induced time dependent variation Proceedings of 2015 11th IEEE International Conference on ASIC (ASICON),

Ji Z, Linten D, Boschke R, Hellings G, Chen SH, Alian A, Zhou D, Mols , Ivanov T, Franco J, Kaczer B, Zhang X, Gao R, Zhang JF, Zhang W, Collaert N. 2015. ESD characterization of planar InGaAs devices IEEE International Reliability Physics Symposium (IRPS), IEEE International Reliability Physics Symposium (IRPS) :3F.1.1-3F.1.7

Duan M, Zhang JF, Manut A, Ji Z, Zhang W, Asenov A, Gerrer L, Reid D, Razaidi H, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G. 2015. Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM IEEE International Electron Devices Meeting (IEDM) :547-550

Ji Z, zhang , Lin , Duan , Zhang W, Zhang X, Gao R, Kaczer B, Franco J, Schram T, Horiguchi N, De Gendt S, Groeseneken G. 2015. A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias 2015 Symposia on VLSI Technology and Circuits >DOI

Ma J, Zhang W, Zhang JF, JI Z, Benbakhti B, Franco J, Mitard J, Witters L, Collaert N, Groeseneken G. 2015. AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction 2015 Symposia on VLSI Technology and Circuits :T35-T34 >DOI

Tang BJ, Zhang WD, Breuil L, Robinson C, Wang YQ, Toledano-Luque M, Van Den Bosch G, Zhang JF, Van Houdt J. 2014. Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations Microelectronics Reliability, 54 :2258-2261 >DOI

Hatta SWM, Ji Z, Zhang JF, Zhang WD, Soin N, Kaczer B, Gendt SD, Groeseneken G. 2014. Energy distribution of positive charges in high-k dielectric Microelectronics Reliability, 54 :2329-2333 >DOI

Ji Z, Zhang JF, Zhang W, Zhang X. 2014. A single device based Voltage Step Stress (VSS) Technique for fast reliability screening

Ma J, Zhang W, ZHang J, Benbakhti B, Ji Z, Mitard J, Franco J, Kaczer B, Groeseneken G. 2014. NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction 2014 IEEE International Electron Devices Meeting :34.2.1-34.2.4 >DOI

Duan M, Zhang JF, Ji Z, Zhang W, Kaczer B, Schram T, Ritzenthaler R, Thean G, Groseneken G, Asenov A. 2014. Time-dependent variation: A new defect-based prediction methodology IEEE 2014 Symposia on VLSI Technology and Circuits :74-75 >DOI

Lin L, Ji Z, Zhang JF, Zhang WD. 2011. Development of a Fast Technique for Characterizing Interface States SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 35 :81-93 >DOI >Link

Tang BJ, Zhang WD, Zhang JF, Van den Bosch G, Govoreanu B, Van Houdt J, IEEE . 2011. Abnormal V-TH/V-FB shift caused by as-grown mobile charges in Al2O3 and its impacts on Flash memory cell operations 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), >Link

Zheng XF, Zhang WD, Govoreanu B, Zhang JF, Van Houdt J. 2009. A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for flash memory application Technical Digest - International Electron Devices Meeting, IEDM, >DOI

Zheng XF, Zhang WD, Govoreanu B, Zhang JF, Van Houdt J. 2009. Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells MICROELECTRONIC ENGINEERING, 16th Biennial Conference on Insulating Films on Semiconductors 86 :1834-1837 >DOI >Link

Zheng XFN, Zhang WD, Govoreanu B, Zhang JF, van Houdt J. 2009. A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory application 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEEE International Electron Devices Meeting (IEDM 2009) :127-+ >Link

Zhang JF, Chang MH, Ji Z, Zhang WD. 2008. Recent progress in understanding the instability and defects in gate dielectrics Yu M, An X. 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 9th International Conference on Solid-State and Integrated-Circuit Technology :608-611 >DOI >Link

Zheng XF, Zhang WD, Zhang JF, Chang MH, Hao Y. 2007. Non-uniform distribution of electron traps generated by fowler-nordheim stress in silicon dioxides ECS Transactions, 6 :329-341 >DOI

Zhang JF, Zhao CZ, Chang MH, Zhang W, Groeseneken G, Pantisano L, De Gendt S, Heyns M. 2007. Instability and defects in gate dielectric: Similarity and differences between Hf-stacks and SiO2 ECS Transactions, 11 :219-233 >DOI

Chang MH, Wang Y, Zhang JF, Zhao CZ, Zhang WD, Xu M. 2007. Contribution of as-grown hole traps to NBTI ECS Transactions, 6 :245-262 >DOI

Zhang WD, Hao Y. 1996. Research of a Chinese terminal I/O port ASIC Zhang QL, Tang TA, Yu HH. 1996 2ND INTERNATIONAL CONFERENCE ON ASIC, PROCEEDINGS, 2nd International Conference on ASIC :191-193 >Link

Benbakhti B, Duffy S, Zhang W, Kalna K, Ahmeda K, Boucherta M, Bourzgui N, Maher H, Soltani A. A Source and Drain Transient Currents Technique for Trap Characterisation in AlGaN/GaN HEMTs

Brown J, Gao R, Ji Z, Chen J, Wu J, Zhang J, Zhou B, Shi Q, Crawford J, Zhang W. A low-power and high-speed True Random Number Generator using generated RTN 2018 Symposia on VLSI Technology and Circuits >Link