Partida-Manzanera T, Zaidi ZH, Roberts JW, Dolmanan SB, Lee KB, Houston PA, Chalker PR, Tripathy S, Potter RJ. 2019. Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors Journal of Applied Physics, 126 :034102-034102 DOI Author Url Public Url
Partida Manzanera T, Roberts JW, Bhat TN, Zhang Z, Tan HR, Dolmanan SB, Sedghi N, Tripathy S, Potter RJ. 2016. Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)(x)(Al2O3)(1-x) as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors Journal of Applied Physics, 119 DOI Author Url Publisher Url Public Url
Partida Manzanera T. Atomic Layer Deposition of Tantalum Doped Aluminium Oxide as a Gate Dielectric for GaN-based Power Transistors Potter R, Sudhiranjan T.