Chai Z, Ma J, Zhang WD, Govoreanu B, Zhang JF, Ji Z, Jurczak M. 2017. Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 :4099-4105 >DOI >Link
Conference Publication (journal proceedings)
Zhang W, Chai Z, Ma J, Zhang JF, Ji Z. 2017. Analysis of RTN signals in resistive-switching RAM device and its correlation with device operations 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, :174-177 >DOI
Claeys C, de Andrade MGC, Chai Z, Fang W, Govoreanu B, Kaczer B, Zhang W, Simoen E. 2016. Random Telegraph Signal Noise in Advanced High Performance and Memory Devices 2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 31st Symposium on Microelectronics Technology and Devices (SBMicro) >Link
Ma J, Chai Z, Zhang W, Govoreanu B, Zhang JF, Ji Z, Benbakhti B, Groeseneken G, Jurczak M. 2016. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 62nd Annual IEEE International Electron Devices Meeting (IEDM) >Link
Chai Z, Ma J, Zhang W, Govoreanu B, Simoen E, Zhang JF, Ji Z, Gao R, Groeseneken G, Jurczak M. 2016. RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism 2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 36th IEEE Symposium on VLSI Technology >Link
Theses / Dissertations
Chai Z. Characterisation of Novel Resistive Switching Memory Devices zhang W, zhang J, ji Z.