Liverpool Skyline

Department of Electronics and Electrical Engineering

Mr Zheng Chai

Mr Zheng Chai

Telephone: 0151 231 2289


Journal Articles

Chai Z, Ma J, Zhang WD, Govoreanu B, Zhang JF, Ji Z, Jurczak M. 2017. Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 :4099-4105 >DOI >Link

Conference Publication (journal proceedings)

Zhang W, Chai Z, Ma J, Zhang JF, Ji Z. 2017. Analysis of RTN signals in resistive-switching RAM device and its correlation with device operations 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, :174-177 >DOI

Claeys C, de Andrade MGC, Chai Z, Fang W, Govoreanu B, Kaczer B, Zhang W, Simoen E. 2016. Random Telegraph Signal Noise in Advanced High Performance and Memory Devices 2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 31st Symposium on Microelectronics Technology and Devices (SBMicro) >Link

Ma J, Chai Z, Zhang W, Govoreanu B, Zhang JF, Ji Z, Benbakhti B, Groeseneken G, Jurczak M. 2016. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 62nd Annual IEEE International Electron Devices Meeting (IEDM) >Link

Chai Z, Ma J, Zhang W, Govoreanu B, Simoen E, Zhang JF, Ji Z, Gao R, Groeseneken G, Jurczak M. 2016. RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism 2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 36th IEEE Symposium on VLSI Technology >Link

Theses / Dissertations

Chai Z. Characterisation of Novel Resistive Switching Memory Devices zhang W, zhang J, ji Z.