Liverpool Skyline

Department of Electronics and Electrical Engineering

Zheng Chai

Zheng Chai

Telephone: 0151 231 2289

ORCID

Publications

Journal article

Chai Z, Wei S, Zhang W, Brown J, Degraeve R, Salim F, Clima S, Hatem F, Zhang J, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2019. GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator IEEE Electron Device Letters, DOI Publisher Url Public Url

Chai Z, Zhang W, Degraeve R, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar GS. 2019. Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors IEEE Electron Device Letters, :1-1 DOI Author Url Publisher Url Public Url

Chai Z, Zhang W, Degraeve R, Zhang JF, Marsland J, Fantini A, Garbin D, Clima S, Goux L, Kar GS. 2019. RTN in GexSe1-x OTS Selector Devices Microelectronic Engineering, 215 DOI Author Url Publisher Url Public Url

Ma J, Chai Z, Zhang W, Zhang J, Marsland J, Govoreanu B, Degraeve R, Goux L, Kar G. 2019. TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device IEEE Transactions on Electron Devices, 66 :777-784 DOI Author Url Publisher Url Public Url

Chai Z, Freitas P, Zhang W, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS. 2018. Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url

Chai Z, Zhang W, Freitas P, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS, Hall S, Chalker P, Robertson J. 2018. The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique IEEE Electron Device Letters, 39 :955-958 DOI Author Url Publisher Url Public Url

Ma J, Chai Z, Zhang W, Zhang J, Ji Z, Benbakhti B, Govoreanu B, Simoen E, Goux L, Belmonte A, Degraeve R, Kar G, Jurczak M. 2018. Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution IEEE Transactions on Electron Devices, 65 :970-977 DOI Author Url Publisher Url Public Url

Chai Z, Ma J, Zhang WD, Govoreanu B, Zhang JF, Ji Z, Jurczak M. 2017. Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals IEEE Transactions on Electron Devices, 64 :4099-4105 DOI Author Url Publisher Url Public Url

Conference publication

Hatem F, Chai Z, Zhang W, Fantini A, Degraeve R, Clima S, Garbin D, Robertson J, Guo Y, Zhang JF, Marsland J, Freitas P, Goux L, Kar G. 2019. Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme IEEE International Electron Device Meeting (IEDM), San Francisco, USA. Public Url

Chai Z, Zhang W, Degraeve R, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2019. Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors 2019 Symposia on VLSI Technology and Circuits DOI Public Url

Ma J, Chai Z, Zhang W, Govoneanu B, Zhang J, Ji Z, Benbakhti B, Groeseneken G, Jurczak M. 2016. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement Technical Digest - International Electron Devices Meeting, IEEE International Electron Devices Meeting :564-567 DOI Author Url Public Url

Zhang W, Chai Z, Ma J, Zhang J, Ji Z. 2016. Analysis of RTN signals in Resistive-Switching RAM device and its correlation with device operations 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) DOI Author Url Public Url

Chai Z, Ma J, Zhang W, Govoreanu B, Simoen E, Zhang J, JI Z, Gao R, Groeseneken G, Jurczak M. 2016. RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism Digest of Technical Papers - Symposium on VLSI Technology, IEEE 2016 Symposia on VLSI Technology and Circuits DOI Author Url Public Url

Claeys C, de Andrade MGC, Chai Z, Fang W, Govoreanu B, Kaczer B, Zhang W, Simoen E. 2016. Random Telegraph Signal Noise in Advanced High Performance and Memory Devices 2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 31st Symposium on Microelectronics Technology and Devices (SBMicro) DOI Author Url

Zhang W, Chai Z, Ma J, Zhang J. Analysis of switching, degradation and failure mechanisms by RTN signals in non-filamentary (a-VMCO) RRAM devices ICSICT 2018 DOI Author Url Public Url

Thesis/Dissertation

Chai Z. Characterisation of Novel Resistive Switching Memory Devices zhang W, zhang J, ji Z. Public Url