Liverpool Skyline

Department of Electronics and Electrical Engineering

Mr Zheng Chai

Mr Zheng Chai

Telephone: 0151 231 2289


Journal article

Chai Z, Zhang W, Freitas P, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS, Hall S, Chalker P, Robertson J. 2018. The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique IEEE Electron Device Letters, >DOI

Ma J, Chai Z, Zhang W, Zhang J, Ji Z, Benbakhti B, Govoreanu B, Simoen E, Goux L, Belmonte A, Degraeve R, Kar G, Jurczak M. 2018. Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution IEEE Transactions on Electron Devices, 65 :970-977 >DOI

Chai Z, Ma J, Zhang WD, Govoreanu B, Zhang JF, Ji Z, Jurczak M. 2017. Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals IEEE Transactions on Electron Devices, :1-7 >DOI

Conference publication

Claeys C, de Andrade MGC, Chai Z, Fang W, Govoreanu B, Kaczer B, Zhang W, Simoen E. 2016. Random Telegraph Signal Noise in Advanced High Performance and Memory Devices 2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 31st Symposium on Microelectronics Technology and Devices (SBMicro) >Link

Zhang W, Chai Z, Ma J, Zhang J, Ji Z. 2016. Analysis of RTN signals in Resistive-Switching RAM device and its correlation with device operations 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Ma J, Chai Z, Zhang W, Govoneanu B, Zhang J, Ji Z, Benbakhti B, Groeseneken G, Jurczak M. 2016. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement Technical Digest - International Electron Devices Meeting, IEEE International Electron Devices Meeting :564-567 >DOI

Chai Z, Ma J, Zhang W, Govoreanu B, Simoen E, Zhang J, JI Z, Gao R, Groeseneken G, Jurczak M. 2016. RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism Digest of Technical Papers - Symposium on VLSI Technology, IEEE 2016 Symposia on VLSI Technology and Circuits >DOI


Chai Z. Characterisation of Novel Resistive Switching Memory Devices zhang W, zhang J, ji Z.