Liverpool Skyline

Department of Electronics and Electrical Engineering

Mr Zhigang Ji

Publications

Journal Articles

Chai Z, Ma J, Zhang WD, Govoreanu B, Zhang JF, Ji Z, Jurczak M. 2017. Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 :4099-4105 >DOI >Link

Gao R, Ji Z, Manut AB, Zhang JF, Franco J, Hatta SWM, Zhang WD, Kaczer B, Linten D, Groeseneken G. 2017. NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 :4011-4017 >DOI >Link

Duan M, Zhang JF, Ji Z, Zhang WD, Ben K, Asenov A. 2017. Key Issues and Solutions for Characterizing Hot Carrier Aging of Nanometer Scale nMOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 :2478-2484 >DOI >Link

Gao R, Manut AB, Ji Z, Ma J, Duan M, Zhang JF, Franco J, Hatta SWM, Zhang WD, Kaczer B, Vigar D, Linten D, Groeseneken G. 2017. Reliable Time Exponents for Long Term Prediction of Negative Bias Temperature Instability by Extrapolation IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 :1467-1473 >DOI >Link

Duan M, Zhang JF, Ji Z, Zhang WD, Vigar D, Asenov A, Gerrer L, Chandra V, Aitken R, Kaczer B. 2016. Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 :3642-3648 >DOI >Link

Ma J, Zhang WD, Zhang JF, Benbakhti B, Ji Z, Mitard J, Arimura H. 2016. A Comparative Study of Defect Energy Distribution and Its Impact on Degradation Kinetics in GeO2/Ge and SiON/Si pMOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 :3830-3836 >DOI >Link

Manut AB, Zhang JF, Duan M, Ji Z, Zhang WD, Kaczer B, Schram T, Horiguchi N, Groeseneken G. 2016. Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 4 :15-21 >DOI >Link

Ji Z, Zhang X, Franco J, Gao R, Duan M, Zhang JF, Zhang WD, Kaczer B, Alian A, Linten D, Zhou D, Collaert N, De Gendt S, Groeseneken G. 2015. An Investigation on Border Traps in III-V MOSFETs With an In0.53Ga0.47As Channel IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 :3633-3639 >DOI >Link

Gao R, Ji Z, Zhang JF, Zhang WD, Hatta SFWM, Niblock J, Bachmayr P, Stauffer L, Wright K, Greer S. 2015. A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 :221-226 >DOI >Link

Feng X, Ren P, Ji Z, Wang R, Sutaria KB, Cao Y, Huang R. 2014. Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, >DOI

Zhang JF, Duani M, Ji Z, Zhang W. 2014. TIME-DEPENDENT DEVICE-TO-DEVICE VARIATION ACCOUNTING FOR WITHIN-DEVICE FLUCTUATION (TVF): A NEW CHARACTERIZATION TECHNIQUE Tang TA, Zhou J. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), >Link

Ji Z, Hatta SWM, Zhang JF, Zhang W, Niblock J, Bachmayr P, Stauffer L, Wright K, Greer S. 2014. A new technique for probing the energy distribution of positive charges in gate dielectric 2014 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), :73-78 >Link

Ji Z, Zhang JF, Zhang W, Zhang X, Kaczer B, De Gendt S, Groeseneken G, Ren P, Wang R, Huang R. 2014. A single device based Voltage Step Stress (VSS) Technique for fast reliability screening 2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, >Link

Tang B, Zhang WD, Degraeve R, Breuil L, Blomme P, Zhang JF, Ji Z, Zahid M, Toledano-Luque M, Van den Bosch G, Van Houdt J. 2014. Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-kappa Intergate Dielectrics of Flash Memory Cells IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :1299-1306 >DOI >Link

Tang B, Zhang W, Toledano-Luque M, Zhang JF, Degraeve R, Ji Z, Arreghini A, Van den Bosch G, Van Houdt J. 2014. Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :1501-1507 >DOI >Link

Duan M, Zhang JF, Ji Z, Zhang W, Kaczer B, Schram T, Ritzenthaler R, Thean A, Groeseneken G, Asenov A. 2014. Time-dependent variation: A new defect-based prediction methodology 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, >Link

Ren P, Wang R, Ji Z, Hao P, Jiang X, Guo S, Luo M, Duan M, Zhang JF, Wang J, Liu J, Bu W, Wu J, Wong W, Yu S, Wu H, Lee S-W, Xu N, Huang R. 2014. New Insights into the Design for End-of-life Variability of NBTI in Scaled High-kappa/Metal-gate Technology for the nano-Reliability Era 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), >Link

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2014. Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs IEEE ELECTRON DEVICE LETTERS, 35 :160-162 >DOI >Link

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang WD, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker PR. 2014. Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :1307-1315 >DOI >Link

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2014. Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :3081-3089 >DOI >Link

Ji Z, Gillbert J, Zhang JF, Zhang W. 2013. A new Ultra-Fast Single Pulse technique (UFSP) for channel effective mobility evaluation in MOSFETs 2013 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), :64-69 >Link

Duan M, Zhang JF, Ji Z, Zhang W. 2013. Defect losses under different processes, stress, recovery, and anneal conditions Lin Q, Claeys C, Huang D, Wu H, Kuo Y, Huang R, Lai K, Zhang Y, Guo Z, Wang S, Liu R, Jiang T, Song P, Lam C, Xiong J, Chen K. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013), 52 :929-934 >DOI >Link

Duan M, Zhang JF, Ji Z, Ma JG, Zhang W, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2013. Key issues and techniques for characterizing Time-dependent Device-to-Device Variation of SRAM 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), >Link

Ji Z, Hatta SFWM, Zhang JF, Ma JG, Zhang W, Soin N, Kaczer B, De Gendt S, Groeseneken G. 2013. Negative Bias Temperature Instability Lifetime Prediction: Problems and Solutions 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), >Link

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2013. New Analysis Method for Time-Dependent Device-To-Device Variation Accounting for Within-Device Fluctuation IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 :2505-2511 >DOI >Link

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2013. New Insights Into Defect Loss, Slowdown, and Device Lifetime Enhancement IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 :413-419 >DOI >Link

Ma J, Zhang JF, Ji Z, Benbakhti B, Duan M, Zhang W, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2013. Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure MICROELECTRONIC ENGINEERING, 109 :43-45 >DOI >Link

Hatta SWM, Ji Z, Zhang JF, Duan M, Zhang WD, Soin N, Kaczer B, De Gendt S, Groeseneken G. 2013. Energy Distribution of Positive Charges in Gate Dielectric: Probing Technique and Impacts of Different Defects IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 :1745-1753 >DOI >Link

Benbakhti B, Zhang JF, Ji Z, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2012. Characterization of Electron Traps in Si-Capped Ge MOSFETs With HfO2/SiO2 Gate Stack IEEE ELECTRON DEVICE LETTERS, 33 :1681-1683 >DOI >Link

Zhang JF, Ji Z, Duan M, Zhang W. 2012. Development of New Characterisation Technique for Interface States Beyond Bandgap Tang TA, Jiang YL. 2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012), :503-506 >Link

Ji Z, Zhang JF, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2012. Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :783-790 >DOI >Link

Duan M, Zhang JF, Ji Z, Zhang W, Kaczer B, De Gendt S, Groeseneken G. 2012. Defect Loss: A New Concept for Reliability of MOSFETs IEEE ELECTRON DEVICE LETTERS, 33 :480-482 >DOI >Link

Ji Z, Zhang JF, Zhang W. 2012. A New Mobility Extraction Technique Based on Simultaneous Ultrafast I-d-V-g and C-cg-V-g Measurements in MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :1906-1914 >DOI >Link

Lin L, Ji Z, Zhang JF, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2011. A Single Pulse Charge Pumping Technique for Fast Measurements of Interface States IEEE TRANSACTIONS ON ELECTRON DEVICES, 58 :1490-1498 >DOI >Link

Zhang JF, Ji Z, Lin L, Zhang W. 2010. Effective threshold voltage shift: A measure for NBTI removing uncertainty in mobility degradation ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, :1600-1603 >DOI

Ji Z, Lin L, Zhang JF, Kaczer B, Groeseneken G. 2010. NBTI Lifetime Prediction and Kinetics at Operation Bias Based on Ultrafast Pulse Measurement IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :228-237 >DOI >Link

Ji Z, Zhang JF, Chang MH, Kaczer B, Groeseneken G. 2009. An Analysis of the NBTI-Induced Threshold Voltage Shift Evaluated by Different Techniques IEEE TRANSACTIONS ON ELECTRON DEVICES, 56 :1086-1093 >DOI >Link

Ji Z, Zhang JF, Zhang W, Groeseneken G, Pantisano L, De Gendt S, Heyns MM. 2009. An assessment of the mobility degradation induced by remote charge scattering APPLIED PHYSICS LETTERS, 95 >DOI >Link

Chang MH, Zhao CZ, Ji Z, Zhang JF, Groeseneken G, Pantisano L, De Gendt S, Heyns MM. 2009. On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks JOURNAL OF APPLIED PHYSICS, 105 >DOI >Link

Zhang JF, Chang MH, Ji Z, Lin L, Ferain I, Groeseneken G, Pantisano L, De Gendt S, Heyns MM. 2008. Dominant Layer for Stress-Induced Positive Charges in Hf-Based Gate Stacks IEEE ELECTRON DEVICE LETTERS, 29 :1360-1363 >DOI >Link

Conference Publication (journal proceedings)

Zhang JF, Ji Z, Zhang W. 2017. The As-grown-Generation (AG) model: A reliable model for reliability prediction under real use conditions IEEE 24th International Symposium on The Physical and Failure Analysis of Integrated Circuits

Duan M, Zhang JF, Zhang JC, Zhang W, Ji Z, Benbakhti B, Zhang XF, Hao Y, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G, Asenov A. 2017. Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction IEEE International Reliability Physics Symposium Proceedings, IEEE International Reliability Physics Symposium (IRPS) :XT-5.1-XT-5.7 >DOI

Zhang JF, Ma J, Zhang W, Ji Z. 2017. DEFECTS AND LIFETIME PREDICTION FOR GE PMOSFETS UNDER AC NBTI STRESSES Claeys C, Huang D, Wu H, Lin Q, Shi Y, Liang S, Huang R, Lai K, Zhang Y, Guo Z, Wang Y, Song P, Shi V. 2017 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2017), China Semiconductor Technology International Conference (CSTIC) >Link

Zhang W, Chai Z, Ma J, Zhang JF, Ji Z. 2017. Analysis of RTN signals in resistive-switching RAM device and its correlation with device operations 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, :174-177 >DOI

Gao R, Ji Z, Hatta SM, Zhang JF, Franco J, Kaczer B, Zhang W, Duan M, De Gendt S, Linten D, Groeseneken G, Bi J, Liu M. 2016. Predictive As-grown-Generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 62nd Annual IEEE International Electron Devices Meeting (IEDM) >Link

Ma J, Chai Z, Zhang W, Govoreanu B, Zhang JF, Ji Z, Benbakhti B, Groeseneken G, Jurczak M. 2016. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 62nd Annual IEEE International Electron Devices Meeting (IEDM) >Link

Zhang JF, Duan M, Ji Z, Zhang W. 2016. DEFECTS FOR RANDOM TELEGRAPH NOISE AND NEGATIVE BIAS TEMPERATURE INSTABILITY Claeys C, Wu H, Lin Q, Huang D, Shi Y, Liang S, Huang R, Lai K, Zhang Y, Zhang B, Wu K, Yan J, Song P, Lung HL, Chen D, Wang Q. 2016 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC), China Semiconductor Technology International Conference (CSTIC) >Link

Ren P, Gao R, Ji Z, Arimura H, Zhang JF, Wang R, Duan M, Zhang W, Franco J, Sioncke S, Cott D, Mitard J, Witters L, Mertens H, Kaczer B, Mocuta A, Collaert N, Linten D, Huang R, Thean AV-Y, Groeseneken G. 2016. Understanding charge traps for optimizing Si-passivated Ge nMOSFETs 2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 36th IEEE Symposium on VLSI Technology >Link

Chai Z, Ma J, Zhang W, Govoreanu B, Simoen E, Zhang JF, Ji Z, Gao R, Groeseneken G, Jurczak M. 2016. RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism 2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 36th IEEE Symposium on VLSI Technology >Link

Duan M, Zhang JF, Manut A, Ji Z, Zhang W, Asenov A, Gerrer L, Reid D, Razaidi H, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G. 2015. Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM Technical Digest - International Electron Devices Meeting, IEDM, 2016-February :20.4.1-20.4.4 >DOI

Zhang JF, Duan M, Ji Z, Zhang W. 2015. NBTI prediction and its induced time dependent variation PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 11th IEEE International Conference on ASIC (ASICON) >Link

Ji Z. 2015. SrTiO3 for sub-20 nm DRAM technology nodes—characterization and modeling INFOS,

Ji Z. 2015. Origins and implications of increased channel hot carrier variability in nFinFETs IEEE International Reliability Physics Symposium (IRPS)

Ji Z, Linten D, Boschke R, Hellings G, Chen SH, Alian A, Zhou D, Mols Y, Ivanov T, Franco J, Kaczer B, Zhang X, Gao R, Zhang JF, Zhang W, Collaert N, Groeseneken G. 2015. ESD Characterization of planar InGaAs devices 2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), IEEE International Reliability Physics Symposium (IRPS) >Link

Duan M, Zhang JF, Manut A, Ji Z, Zhang W, Asenov A, Gerrer L, Reid D, Razaidi H, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G. 2015. Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM 2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), IEEE International Electron Devices Meeting (IEDM) >Link

Ma J, Zhang W, Zhang JF, Ji Z, Benbakhti B, Franco J, Mitard J, Witters L, Collaert N, Groeseneken G. 2015. AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction 2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY), 35th Anniversary of the Symposium on VLSI Technology (VLSI Technology) >Link

Ji Z, Zhang JF, Lin L, Duan M, Zhang W, Zhang X, Gao R, Kaczer B, Franco J, Schram T, Horiguchi N, De Gendt S, Groeseneken G. 2015. A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias 2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY), 35th Anniversary of the Symposium on VLSI Technology (VLSI Technology) >Link

Hatta SWM, Ji Z, Zhang JF, Zhang WD, Soin N, Kaczer B, Gendt SD, Groeseneken G. 2014. Energy distribution of positive charges in high-k dielectric Microelectronics Reliability, 54 :2329-2333 >DOI

Ren P, Wang R, Ji Z, Hao P, Jiang X, Guo X, Luo M, Duan M, Zhang J, Wang J, Liu J, Bu W, Wong W, Yu S, Wu H, Lee W, Xu N, Huang R. 2014. New Insights into the Design for End-of-life Variability of NBTI in Scaled High-Îș/Metal-gate Technology for the nano-Reliability Era IEEE International Electron Devices Meeting (IEDM) :816-819

Ji Z, Zhang JF, Zhang W, Zhang X. 2014. A single device based Voltage Step Stress (VSS) Technique for fast reliability screening

Ma J, Zhang W, Zhang JF, Benbakhti B, Ji Z, Mitard J, Franco J, Kaczer B, Groeseneken G. 2014. NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 60th Annual IEEE International Electron Devices Meeting (IEDM) >Link

Duan M, Zhang JF, Ji Z, Zhang W, Kaczer B, Schram T, Ritzenthaler R, Thean G, Groseneken G, Asenov A. 2014. Time-dependent variation: A new defect-based prediction methodology IEEE 2014 Symposia on VLSI Technology and Circuits :74-75 >DOI

Lin L, Ji Z, Zhang JF, Zhang WD. 2011. Development of a Fast Technique for Characterizing Interface States SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 35 :81-93 >DOI >Link

Ji Z, Lin L, Zhang JF. 2009. Impact of sensing gate bias on NBTI of Hf-based dielectric stacks Sah RE, Deen JM, Toriumi A, Zhang J, Yota J. SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 10, Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics held at the 215th ECS Meeting 19 :351-362 >DOI >Link

Zhang JF, Chang MH, Ji Z, Zhang WD. 2008. Recent progress in understanding the instability and defects in gate dielectrics Yu M, An X. 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 9th International Conference on Solid-State and Integrated-Circuit Technology :608-611 >DOI >Link

Zhang JF, Ji Z, Chang MH, Kaczer B, Groeseneken G. 2007. Real Vth instability of pMOSFETs under practical operation conditions 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, IEEE International Electron Devices Meeting :817-+ >DOI >Link

Zhang JF, Duan M, Ji Z, Zhang W. Hot carrier aging of nano-meter devices 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT),